Motorola Corporation

Nxp Usa, Inc.

Gary Pfeffer

Joel Patrick Mitchell

Ruben B Montez

Srivatsa G Kundalgurki

Fred Cumplan

Fred Cumpian

A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

Etch release residue removal using anhydrous solution

A method for forming a cavity ( ) to a structure such as a poly fuse ( ) with a deep etch process whereby a mask is formed over the structure a first dielectric layer ( ) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer ( ) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric ( ) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity

Method for forming a cavity capable of accessing deep fuse structures and device containing the same

A method for forming a cavity (30) to a structure such as a poly fuse (114) with a deep etch process whereby a mask is formed over the structure a first dielectric layer (23) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer (34) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric (34) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity 30.

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Austin, TX, United States of America

Gary Pfeffer