International Business Machines Corporation

Gary P Viens

Timothy Harrison Daubenspeck

Stephen Ellinwood Luce

Harold G Linde

Rosemary A Previti-Kelly

Jung H Yoon

John R Abernathey

Robert T Valley

Denis J Poley

Marilyn R Leduc

James R Weightman

Non-aqueous cleaning compositions capable of removing cured polyimides and other polymers from a metal circuitry containing substrate such as a semiconductor device for rework and other purposes without any significant adverse affect on the circuitry are provided consisting essentially of alkanolamines, preferably monoethanolamine or monoethanolamine-diethanolamine mixtures and optionally with a solvent such as NMP in an amount less than about 50% by weight. A method is also provided for removing polyimide coatings and other polymers from semiconductor devices using the cleaning compositions of the invention.

Method for removal of cured polyimide and other polymers

A spin-apply tool avoids contamination of a substrate back surface by providing exhaust along or beyond a periphery of a splash shield. The peripheral exhaust pulls a mist of droplets of liquid spun off the substrate away from the substrate. The spin-apply tool includes a spin chuck for holding the substrate, a basin extending around the chuck, a splash shield in the basin, and an exhaust substantially symmetric with the center of the substrate. The chuck surface defines a plane, and the splash shield extends as a ring around the chuck at an angle to that plane sufficient to deflect liquid flying off the chuck down to the basin. The basin may have a removable liner that can be cleaned and reused. Use of solvent to clean the backside of substrates is avoided. And a basin drain is eliminated, eliminating the need for any solvent consumption.

Spin-apply tool having exhaust ring

A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO.sub.2. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.

Bilayer metallization cap for photolithography

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Colchester, VT, United States of America

Gary P Viens