David Sarnoff Research Center, Inc.

General Electric Company

Sarnoff Corporation

Gary Mark Dolny

Roger Green Stewart

Alfred C Ipri

Fu-Lung Hseuh

Alvin M Goodman

In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.

High-voltage transistor

Active matrix electroluminescent display pixel element having a field

Method for fabricating a switching transistor having a capacitive

The present invention is a complementary-symmetry COMFET pair consisting of an N-channel lateral COMFET and a P-channel lateral COMFET interconnected in parallel on the same chip. The device is formed in a layer of single-crystalline silicon of one conductivity type with one of the pair of COMFETs being formed directly in this layer. A well of opposite conductivity type is disposed in the layer and the other of the pair of COMFETs is disposed in the well. The two COMFETs are isolated from each other by a highly doped region which extends from the surface of the layer to the substrate and is of the same conductivity type as that of the substrate.

Structure for a complementary-symmetry COMFET pair

Growing community of inventors

Newtown, PA, United States of America

Gary Mark Dolny