Taiwan Semiconductor Manufacturing Comp. Ltd.

Gary Liu

Shau-Lin Shue

Hsin-Yen Huang

Shao-Kuan Lee

Cheng-Chin Lee

Chi-Lin Teng

Ting-Ya Lo

Hsiao-Kang Chang

Cherng-Shiaw Tsai

Kuang-Wei Yang

A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Semiconductor device having metallization layer with low capacitance and method for manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Gary Liu