Intel Corporation

Dcg Systems Gmbh

Credence Systems Corporation

Spectralane, Inc.

Gary Leonard Woods

Paul Winer

Richard H Livengood

Steven Kasapi

Michael DiBattista

Stefan Rusu

Kenneth R Wilsher

Dean J Grannes

Harry Muljono

Paul D Madland

Jeremy A Rowlette

Travis M Eiles

Samie B Samaan

William K Lo

Nina Boiadjieva

Jing Tian

Hitesh Suri

Nagamani Nataraj

Radu Ispasoiu

Keith A Sigg

Donald A Pitt

Steven G Seidel

Time-resolved emission can be used to measure loop-synchronous, small-signal voltage perturbation in integrated circuits. In this technique the measurements are completely non-invasive and so reflect the true device behavior. The time-dependant propagation delay caused by Vdd modulation also shows the expected qualitative signature. This technique should find applications in circuits with relatively fast clock-like circuits where loop-synchronous voltage pickup is limiting circuit behavior.

System and method for voltage noise and jitter measurement using time-resolved emission

An apparatus and method for laser probing of a DUT at very high temporal resolution is disclosed. The system includes a CW laser source, a beam optics designed to point two orthogonally polarized beams at the same location on the DUT, optical detectors for detecting the reflected beams, collection electronics, and an oscilloscope. The beam optics defines a common-path polarization differential probing (PDP) optics. The common-path PDP optics divides the laser beam into two beams of orthogonal polarization. Due to the intrinsic asymmetry of a CMOS transistor, the interaction of the beams with the DUT result in different phase modulation in each beam. This difference can be investigated to study the response of the DUT to the stimulus signal.

Apparatus and method for probing integrated circuits using laser illumination

A system for probing a DUT is provided, the system comprising a tunable or CW laser source, a modulator for modulating the output of the laser source, a beam optics designed to point a probing beam at a designated location on the DUT, optical detector for detecting the reflected beam, and collection and signal processing electronics. The system deciphers perturbations in the reflected beam by detecting beat frequency between operation frequency of the DUT and frequency of the modulation. In an alternative embodiment, the laser is CW and the modulation is applied to the optical detector.

Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system

A method for identifying an area of a chip to be probed proceeds as follows. A callout list of failures is obtained from a tester, the list including cell name and pin for each failure. A Def file is interrogated to locate a Def entry matching the cell name, and a cell type, cell location, and cell orientation data is obtained for the cell from the Def file. A Lef file is then interrogated to locate a Lef entry matching the cell type, and the coordinates of the pin are obtaining from the Lef file. A GDS file is interrogated to locate a GDS entry matching the cell type, and the coordinates of polygons listed in the GDS entry are obtained. The coordinates of the pin are then crossed with the coordinates of the polygons to identify overlapping area. The overlapping area is defined as the location to be probed. A driving signal is applied to a stage to align a prober with the location to be probed.

System and method for determining probing locations on IC

A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Method and apparatus for controlling material removal from semiconductor substrate using induced current endpointing

A beacon circuit enabling study of active elements in an integrated circuit is disclosed. The beacon circuit may be integral to a DUT to be tested. The DUT is stimulated by a conventional ATE, so that its active devices are operating. The signal from the active device is sent to the beacon circuit which, in response to the signal, emits light having intensity that is proportional to the value of the signal. In one example, the beacon circuit is constructed as a voltage to current converter having its input connected to the node of interest and its output connected to a current to light converter. In one example, the current to light converter is implemented as a current mirror circuit. One beneficial implementation disclosed is the use of the beacon circuit for the study of voltage supply disturbances.

Apparatus and method for determining voltage using optical observation

Method and apparatus for controlling material removal from a semiconductor substrate using induced current endpointing

A device and method for probing high-speed local supply voltage fluctuations in VLSI circuits. The device includes a voltage probe coupled to a source of the local supply voltage, the voltage probe detectably emitting infrared radiation having an intensity that is related to a magnitude of the local supply voltage. The method includes emitting infrared radiation having an intensity that is related to the magnitude of the local supply voltage, taking initial measurements of the emitted radiation intensity for a range of supply voltages while digital activity is suspended in a vicinity of the local voltage probe, and compiling a calibration table matching measured intensity values with a magnitude of the supply voltage. Thereafter, digital activity is initiated by running a repetitive pattern through circuitry in the vicinity of the local voltage probe, where the repetitive pattern stimulates local supply voltage fluctuation events. Samples of emitted radiation intensity are taken using a time correlated photon counting or equivalent time sampling process and local supply voltage fluctuations are determined from the detected radiation.

Device and method for probing instantaneous high-speed local supply voltage fluctuation in VLSI integrated circuits using IR emissions

Time-correlated photon counting is used to measure integrated circuit (IC) performance related to signal jitter (such as clock jitter) in a manner that is non-invasive to the circuit or node of interest. The signal jitter is measured by counting photon emissions at various nodes of interest across a controlled collapse chip connect (C4) mounted die, without interfering with the normal operation of the circuit of interest. This increases the precision and accuracy of the measurement of signal jitter significantly, since small amounts of phase noise on a particular clock signal edge can be detected. The emitted photons can be detected and subsequently correlated to a precise time base to obtain a statistical spread of switching events in time. The range of the photon distribution can be used to reliably determine safe and reasonable timing guard bands for clock and data paths in an IC.

Method and apparatus to measure statistical variation of electrical signal phase in integrated circuits using time-correlated photon counting

A method is provided for manufacturing a die. A supply voltage is provided to a power plane of a selected integrated circuit, formed in and on a semiconductor substrate, having a selected design, so that a respective test current flows through a plurality of test elements, of the selected integrated circuit, each being connected to a respective test point on the power plane, the test points being spaced from one another. A magnitude of each respective test current is detected. A respective test voltage is calculated at each respective test point utilizing the respective magnitude of the respective test current flowing through the respective test element connected to a respective test point. The respective test voltages are utilized to determine at which ones of the test points the respective test voltages are more than a predetermined maximum below a supply voltage. The electric design is altered to an altered electric design if any of the test voltages are below a predetermined minimum below the supply voltage. An integrated circuit having the altered design is then manufactured on another semiconductor substrate.

Semiconductor die manufacture method to limit a voltage drop on a power plane thereof by noninvasively measuring voltages on a power plane

An optical amplifier suitable for use in optical communication systems such as for telecommunications or cable television provides, for purposes of wavelength division multiplexed communications, the ability to amplify optical signals in both the C band, L band, and S band using conventional EDFA amplifiers. The S band, normally not amplifiable by EDFAs, here is amplified by converting the S band signal to a C band optical signal, providing optical amplification by an EDFA, then reconverting the amplified C band optical signal back to the S band in the same or a subsequent amplifier stage. The wavelength converters are, for instance, periodically poled lithium niobate devices using three-wave mixing, and employing difference frequency generation techniques.

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Sunnyvale, CA, United States of America

Gary Leonard Woods