Applied Materials, Inc.

Gary Lam

Fred Conrad Redeker

Shijian Li

Jui-lung Li

Shi-Ping Wang

David H Mai

Rajeev Bajaj

Yongqi Hu

Kapila P Wijekoon

Tony Kaushal

Rahul Surana

Yongsik Moon

Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

Method of chemical mechanical polishing with high throughput and low dishing

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Method and apparatus for polishing metal and dielectric substrates

Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects

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Santa Clara, CA, United States of America

Gary Lam