International Business Machines Corporation

Gary Lafontant

Timothy Dooling Sullivan

Mukta G Farooq

Thomas Anthony Wassick

John A Griesemer

Timothy Harrison Daubenspeck

Steven Lorenz Wright

Krystyna Waleria Semkow

Ekta Misra

George John Scott

Kevin Shawn Petrarca

Richard Paul Volant

Raschid Jose Bezama

Ian D Melville

William Francis Landers

Xiaojin Wei

Robin A Susko

Bucknell Chapman Webb

David L Questad

Michael Jay Shapiro

Mario John Interrante

Edward R Pillai

Warren D Dyckman

Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs with a metal; defining capture pad areas on at least one of the active side and the inactive side adjacent to the TSVs, the defined capture pad areas comprising insulator islands and open areas; filling the open areas with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having an all metal portion that follows an outline of each of the TSVs.

Enhanced capture pads for through semiconductor vias

Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs with a metal such that the metal is recessed with respect to at least one of the active side and the inactive side and does not entirely fill the TSVs; defining capture pad areas on the at least one of the active side and inactive side adjacent to the recessed TSVs; filling the capture pad areas and recessed TSVs with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having an all metal portion that follows an outline of each of the TSVs. Also disclosed is a semiconductor substrate having a capture pad.

Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

Structures and methods to reduce maximum current density in a solder ball

A semiconductor structure which includes a plurality of stacked semiconductor chips in a three dimensional configuration. There is a first semiconductor chip in contact with a second semiconductor chip. The first semiconductor chip includes a through silicon via (TSV) extending through the first semiconductor chip; an electrically conducting pad at a surface of the first semiconductor chip, the TSV terminating in contact at a first side of the electrically conducting pad; a passivation layer covering the electrically conducting pad, the passivation layer having a plurality of openings; and a plurality of electrically conducting structures formed in the plurality of openings and in contact with a second side of the electrically conducting pad, the contact of the plurality of electrically conducting structures with the electrically conducting pad being offset with respect to the contact of the TSV with the electrically conducting pad.

Semiconductor structure having offset passivation to reduce electromigration

Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.

Offset solder vias, methods of manufacturing and design structures

The embodiments provide a method for reducing electromigration in a circuit containing a through-silicon via (TSV) and the resulting novel structure for the TSV. A TSV is formed through a semiconductor substrate. A first end of the TSV connects to a first metallization layer on a device side of the semiconductor substrate. A second end of the TSV connects to a second metallization layer on a grind side of the semiconductor substrate. A first flat edge is created on the first end of the TSV at the intersection of the first end of the TSV and the first metallization layer. A second flat edge is created on the second end of the TSV at the intersection of the second end of the TSV and the second metallization layer. On top of the first end a metal contact grid is placed, having less than eighty percent metal coverage.

Enhanced electromigration resistance in TSV structure and design

The present invention provides a technique for adjusting the size of clearance holes for impedance control in multilayer electronic packaging and printed circuit boards. The method comprises: providing parameters for a structure having a clearance hole and at least one via passing through the clearance hole; calculating a characteristic impedance for the at least one via; and adjusting at least a size of the clearance hole until the characteristic impedance for the at least one via is approximately equal to a desired characteristic impedance.

Clearance hole size adjustment for impedance control in multilayer electronic packaging and printed circuit boards

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Elmont, NY, United States of America

Gary Lafontant