Iowa State University Research Foundation, Inc.

Gary L Tuttle

Mihail Sigalas

Kai-Ming Ho

Costas M Soukoulis

Rana Biswas

Ekmel Ozbay

Jonathan Scott McCalmont

Thomas Koschny

Sandhya Gupta

Che-Ting Chan

Burak Temelkuran

Jiangfeng Zhou

Kai Ming Ho

Lei Zhang

Erick Michel

The invention provides simplified negative index materials (NIMs) using wire-pair structures, 4-gap single ring split-ring resonator (SRR), fishnet structures and overleaf capacitor SRR. In the wire-pair arrangement, a pair of short parallel wires and continuous wires are used. In the 4-gap single-ring SRR, the SRRs are centered on the faces of a cubic unit cell combined with a continuous wire type resonator. Combining both elements creates a frequency band where the metamaterial is transparent with simultaneously negative &#x2208; and &#x3bc;. In the fishnet structure, a metallic mesh on both sides of the dielectric spacer is used. The overleaf capacitor SRR changes the gap capacities to small plate capacitors by making the sections of the SRR ring overlap at the gaps separated by a thin dielectric film. This technique is applicable to conventional SRR gaps but it best deploys for the 4-gap single-ring structures.

Structures with negative index of refraction

A directional antenna made with photonic band gap structures has been presented. The directional antenna is formed with two photonic band gap structures oriented back to back and separated from each other by a distance to form a resonant cavity between the photonic band gap structures. An antenna element is placed in the resonant cavity. The resonant frequency of the cavity is tuned by adjusting the distance between the photonic band gap structures. The resonant cavity can be asymmetrical or symmetrical.

Highly directional receiver and source antennas using photonic band gap crystals

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

Periodic dielectric structure for production of photonic band gap and

Growing community of inventors

Ames, IA, United States of America

Gary L Tuttle