Kla-tencor Technologies Corporation

Kla Tencor Corporation

Sandisk Technologies Inc.

Solaicx, Inc.

Gary Janik

John Fielden

Shing Lee

Jeffrey Allen Moore

Hidong Kwak

Ying Gao

Patrick M Maxton

Mehrdad Nikoonahad

James G Peterson

Jea Hyun

Jamie Michael Sullivan

Robert M Danen

Grace Hsiu-Ling Chen

Mikhail Haurylau

Steve Yifeng Cui

Eric Bouche

Meier Yitzhak Brender

Dan G Georgesco

Steve Short

Suwipin Martono

Shobhit Verma

Guoheng Zhao

Shankar Krishnan

Gildardo Rios Delgado

Qiang Zhao

Zhengquan Tan

Qiang Q Zhang

Liang-Guo Wang

Wenjian Cai

Rex Runyon

Dieter Wilk

Sergio Edelstein

David L Bender

Johannes D De Veer

James McWhirter

Edward Michael James

Roy P Crawford

David E A Smith

Roger L Kroeze

Haixing Zou

Sungchul Yoo

Christopher M Pohlhammer

Bernard Lautee

Jennming James Chen

Murali Narsimhan

Torsten Kaack

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. A control module is configured to limit erase dwell times for blocks of a non-volatile memory medium to satisfy a threshold. A block classification module is configured to group blocks of a non-volatile memory medium based on retention times for the blocks. A block access module is configured to access at least one group of blocks using a read voltage threshold selected based on a grouping.

Configuration parameter management for non-volatile data storage

Storage divisions of a non-volatile storage medium may have a writable state and an unwritable state. Storage divisions may be reclaimed by, inter alia, resetting the storage division from an unwritable state to a writable state. Writable storage divisions may be used to service incoming storage requests. If no writable storage divisions are available, requests may stall. One or more storage divisions may be held in a writable state to avoid stall conditions. This, however, may increase the erase dwell time of the storage divisions, which can result in increased wear and reduce the usable life of the storage device. Storage divisions may be prepared for use such that the storage divisions are transitioned to a writable state such that erase dwell time of the storage divisions is reduced, and the storage divisions are available as needed to service incoming requests.

Systems and methods for managing storage endurance

The present invention for imaging sensor rejuvenation may include a rejuvenation illumination system configured to selectably illuminate a portion of an imaging sensor of an imaging system with illumination suitable for at least partially rejuvenating the imaging sensor degraded by exposure to at least one of extreme ultraviolet light or deep ultraviolet light; and a controller communicatively coupled to the rejuvenation illumination system and configured to direct the rejuvenation illumination system to illuminate the imaging sensor for one or more illumination cycles during a non-imaging state of the imaging sensor.

System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. A control module is configured to manage differences in one or more storage characteristics for blocks of a non-volatile memory medium within one or more established limits. A block classification module is configured to group blocks of a non-volatile memory medium based on one or more other storage characteristics. A configuration parameter module is configured to use a configuration parameter for at least one group of blocks based on a grouping. A configuration parameter update module is configured to update a configuration parameter for at least one group in response to a change in one or more managed storage characteristics.

An inspection system with selectable apodization includes a selectably configurable apodization device disposed along an optical pathway of an optical system. The apodization device includes one or more apodization elements operatively coupled to one or more actuation stages. The one or more actuation stages are configured to selectably actuate the one or more apodization elements along one or more directions. The inspection system includes a control system communicatively coupled to the one or more actuation stages. The control system is configured to selectably control an actuation state of at the one or more apodization elements so as to apply a selected apodization profile formed with the one or more apodization elements.

System and method for apodization in a semiconductor device inspection system

An inspection system with selectable apodization includes an illumination source configured to illuminate a surface of a sample, a detector configured to detect at least a portion of light emanating from the surface of the sample, the illumination source and the detector being optically coupled via an optical pathway of an optical system, a selectably configurable apodization device disposed along the optical pathway, wherein the apodization device includes one or more apodization elements operatively coupled to one or more actuation stages configured to selectably actuate the one or more apodization elements along one or more directions, and a control system communicatively coupled to the one or more actuation and configured to selectably control apodization of illumination transmitted along the optical pathway by controlling an actuation state of the one or more apodization elements.

A weighing system is provided for a continuous Czochralski process that accurately measures the weight of the crucible and melt during crystal growth to control the introduction of feedstock in order to keep the weight approximately constant. The system can measure the weight of the crucible while the crucible is rotating, and is insensitive to vibrations of the melt surface as well as variable torques on the crucible shaft induced by the rotation. The system also measures the weight of the crucible and its contents in order to control the amount of feedstock recharged after an ingot is withdrawn.

Crucible weight measurement system for controlling feedstock introduction in Czochralski crystal growth

A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.

Scatterometry metrology using inelastic scattering

Various systems for measurement of a specimen are provided. One system includes a first optical subsystem, which is disposed within a purged environment. The purged environment may be provided by a differential purging subsystem. The first optical subsystem performs measurements using vacuum ultraviolet light. This system also includes a second optical subsystem, which is disposed within a non-purged environment. The second optical subsystem performs measurements using non-vacuum ultraviolet light. Another system includes two or more optical subsystems configured to perform measurements of a specimen using vacuum ultraviolet light. The system also includes a purging subsystem configured to maintain a purged environment around the two or more optical subsystems. The purging subsystem is also configured to maintain the same level of purging in both optical subsystems. Some systems also include a cleaning subsystem configured to remove contaminants from a portion of a specimen prior to measurements at vacuum ultraviolet wavelengths.

Systems and methods for measurement of a specimen with vacuum ultraviolet light

Various systems for measurement of a specimen are provided. One system includes an optical subsystem configured to perform measurements of a specimen using vacuum ultraviolet light and non-vacuum ultraviolet light. This system also includes a purging subsystem that is configured to maintain a purged environment around the optical subsystem during the measurements. Another system includes a cleaning subsystem configured to remove contaminants from a specimen prior to measurement. In one embodiment, the cleaning subsystem may be a laser-based cleaning subsystem that is configured to remove contaminants from a localized area on the specimen. The system also includes an optical subsystem that is configured to perform measurements of the specimen using vacuum ultraviolet light. The optical subsystem is disposed within a purged environment. In some embodiments, the system may include a differential purging subsystem that is configured to provide the purged environment for the optical subsystem.

A metrology recipe includes dynamic instructions that allow a metrology tool to perform a secondary metrology operation on a test wafer when previous measurement data indicates a process issue with that test wafer. The metrology recipe can instruct the metrology tool to perform an efficient default metrology operation on all test wafers, and perform a more in-depth secondary metrology operation on only those wafers that warrant additional scrutiny. In this manner, critical metrology data can be captured with a minimum of effect on metrology throughput. The metrology data used to determine whether or not the secondary metrology operation is to be performed can be generated from default metrology operations within the same tool, or can be generated by measurements taken by a completely different tool. Such 'external' metrology data can be received via a communications network, either directly or from a server on the network for processing the metrology data.

Dynamic measurement control

A corona-microwave system can generate accurate capacitance-voltage (C-V) and resistance-voltage (R-V) curves, thereby allowing the accurate determination of gate film capacitance, sheet resistance of implanted regions, and mobility of a substrate under a gate. The corona-microwave system can combine a corona deposition system, a Kelvin probe, and a microwave probe. The corona deposition system can deposit a corona charge on a surface of the semiconductor. The Kelvin and microwave probes can be used to make first and second electrical measurements of a layer/region of the semiconductor. The steps of charge deposition and probe measurements can be repeated to generate a curve plotting the first and second electrical measurements. Because the first and second electrical measurements can be accurately made, the extracted information from the curve is also accurate.

Electrical measurements on semiconductors using corona and microwave techniques

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Palo Alto, CA, United States of America

Gary Janik