Motorola Corporation

Electric Power Research Institute Incorporated

Gary H Shapiro

Kenneth David Cornett

Wei-Yean Howng

E S Ramakrishnan

Greg R Black

Michael A Newell

David R Heine

David E Thomas

Thomas M Salas

Stephen J Halko

Frank S Nickel

Raymond M Caldwell

Carl M Wiggins

An integrable circuit inductor (220) is formed from a patterned conductive material (110) that has a major portion completely encapsulated by a material (221, 223) that is substantially electrically non-conductive, and that has a magnetic response at the operating frequency of the inductor (220). Preferably, an amorphous ferrite material is used for encapsulation, which provides a closed magnetic flux path for the inductor (220) when processing a signal at its operating frequency.

Integrable using amorphous magnetic material circuit inductor

A power amplifier output module 200 having low insertion loss and self-shielding properties for dual-mode digital systems is provided. Module 200 has a first power amplifier drive circuit comprising a first power amplifier 220 and a first output impedance matching network having integrated suppression of higher order harmonics 222. A second power amplifier drive circuit comprising a second power amplifier 224 and a second output impedance matching network having integrated suppression of higher order harmonics 226 is also provided. Module 200 also comprises a single diplexer 228 coupled to the first impedance matching network and the second impedance matching network. Module 200 also comprises a single broadband directional coupler 230, coupled to the diplexer 228, for coupling both the first power amplifier drive circuit and the second power amplifier drive circuit. Module 200 provides an integrated solution involving greater performance in a smaller package.

Power amplifier output module for dual-mode digital systems

A multilayer ceramic package (200) with a floating element (202) to couple transmission lines (214) is disclosed. The package (200) has numerous dielectric layers (204A-204I) including an input electrode (206), an output electrode (208), a top ground plane (210) and a bottom ground plane (212). Transmission lines (214) are formed on some of the dielectric layers (204A-204I). Floating element (202) adjusts the electrical coupling between the transmission lines (214) and is spatially separated therefrom. This may provide the advantage of increased capacitive coupling between transmission line resonator structures in a multilayer packages, including non-adjacent resonant structures, without increasing the overall dimensions of the package (200). The floating element (202) may also increase the operable passband of a multilayer bandpass filter or provide a low-side transmission zero.

Multilayer ceramic package with floating element to couple transmission

A laminated lowpass filter (100) is disclosed. The filter (100) has: a stack of dielectric substrates (301-312) having a ground via (209); a pi network coupled between an input (202) and an output (202'); and the ground via (209) is conductively filled and extends substantially through the sheets of dielectric (301-312) connecting a first ground plane (102) to a second ground plane (104) and is spaced a predetermined distance between a first and a second leg of the pi network, to define an isolation barrier that substantially minimizes the passage of stray signals therebetween.

Multilayer lowpass filter with improved ground plane configuration

A simple and inexpensive device which is suited for real-time location of a fault occurring anywhere in a residential distribution system by analysis of the propogating fault signal considering the predetermined propagating velocity of the cable.

Advanced cable fault location

A voltage variable capacitor (10) has as the base substrate a silicon wafer with a layer of high resistivity semiconductor material on top of the substrate. An insulating layer (16) of a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductors (12), such as zirconium titanate, is formed on top of the high resistivity layer, and a metal electrode (18) is formed on the insulating layer (16). When the electrode is energized, a depletion layer (20) is formed in the high resistivity layer. By varying the voltage applied to the electrode, the capacitance of the device is altered.

Growing community of inventors

Albuquerque, NM, United States of America

Gary H Shapiro