Motorola Corporation

Gary G Ehlenberger

Earl D Fuchs

Herng-Der Chiou

A diffusivity and a solubility of dopant atoms are increased within a semiconductor wafer (30). A portion (36) of the semiconductor wafer (30) is disrupted by a technique of ion implantation thereby forming a defect layer (36). A predeposition layer (37) is formed by placing the semiconductor wafer (30) in a predeposition furnace. The defect layer (36) has a large number of point defects in a semiconductor crystal lattice which accept dopant atoms in excess of their solid solubility limit. The point defects increase the diffusivity and solubility of the dopant atoms thereby increasing a junction depth and surface concentration in subsequent high temperature diffusion steps.

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Phoenix, AZ, United States of America

Gary G Ehlenberger