Texas Instruments Corporation

Gary Eugene Daum

Simon John Molloy

Christopher Boguslaw Kocon

David John Baldwin

Charles Walter Pearce

Abidur Rahman

Md Abidur Rahman

John Manning Savidge Neilson

Ankur Chauhan

Haian Lin

Subrato Roy

Eung Jung Kim

Vijay Krishnamurthy

Min Chu

Vinayak Hegde

Tikno Harjono

Kuntal Joardar

Sathish Vallamkonda

An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.

Power transistors with a resistor coupled to a sense transistor

A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches.

Power FET with integrated sensors and method of manufacturing

A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.

High voltage channel diode

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Orwigsburg, PA, United States of America

Gary Eugene Daum