Rambus Inc.

Hefei Reliance Memory Limited

Cryptography Research, Inc.

Gary Bela Bronner

Brent Steven Haukness

Deepak Chandra Sekar

Frederick Abbott Ware

Mark D Kellam

Thomas Vogelsang

Kevin S Donnelly

Wayne Frederick Ellis

Zhichao Lu

Ian P Shaeffer

Mark A Horowitz

Scott C Best

Ming Chu Li

Fariborz Assaderaghi

Donald R Mullen

Christophe J Chevallier

Ely K Tsern

Mark Evan Marson

Yoshihito Koya

Philip F S Swab

Lidia Vereen

Elizabeth Friend

Mehmet Gunhan Ertosun

The embodiments herein describe technologies of initializing resistive memory devices (e.g., non-volatile and volatile memory devices). In one method, a first voltage is applied across a resistance change material of a memory cell to form an initial filament and multiple cycles are performed to condition the initial filament. Each of the multiple cycles includes: applying a second voltage with a first polarity across the resistance change material; and applying a third voltage with a second polarity across the resistance change material.

Techniques for initializing resistive memory devices by applying voltages with different polarities

Control logic within a memory control component outputs first and second memory read commands to a memory module at respective times, the memory module having memory components disposed thereon. Interface circuitry within the memory control component receives first read data concurrently from a first plurality of the memory components via a first plurality of data paths, respectively, in response to the first memory read command, and receives second read data concurrently from a second plurality of the memory components via a second plurality of data paths, respectively, in response to the second memory read command, the first plurality of the memory components including at least one memory component not included in the second plurality of the memory components and vice-versa.

Self-annealing data storage system

A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Processing unit with fast read speed memory device

Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.

Non-volatile memory structure with positioned doping

Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

2T-1R architecture for resistive ram

Fast read speed memory device

A memory system includes an array of non-volatile memory cells and a memory controller having a first port to receive a program command that addresses a number of the memory cells for a programming operation, having a second port coupled to the memory array via a command pipeline, and configured to create a plurality of fractional program commands in response to the program command. Execution of each fractional program command applies a single program pulse to the addressed memory cells to incrementally program the addressed memory cells with program data, where the duration of the program pulse associated with each fractional program command is a selected fraction of the total programming time typically required to program the memory cells.

Fractional program commands for memory devices

2T-1R architecture for resistive RAM

An anti-tamper layer is applied to a blank wafer. The layered wafer is then diced into shield dies. A shield die is oxide-to-oxide bonded to the top of an active die such that removing the shield die will damage the active die. The shield die may be sized and positioned such that wirebond pads along one or more edges of the active die remain exposed. The exposed wirebond pads may be used to electrically connect, via wirebonds, the active die to a substrate. A second shield die may be attached to the bottom of the active die to help protect against the use of bottom-to-top delayering.

Integrated circuit shield

Dynamic memory rank configuration

Growing community of inventors

Los Altos, CA, United States of America

Gary Bela Bronner