Lightwind Corporation

Matrix Integrated Systems, Inc.

Tegal Corporation

Gary B Powell

Herbert Elliot Litvak

Richard L Hazard

David J Drage

Georges J Gorin

Tony Sie

Salvatore A Celestino

Stephen E Hilliker

The present invention relates to monitoring chemicals in a process chamber using a spectrometer having a plasma generator, based on patterns over time of chemical consumption. The relevant patterns may include a change in consumption, reaching a consumption plateau, absence of consumption, or presence of consumption. In some embodiments, advancing to a next step in forming structures on the workpiece depends on the pattern of consumption meeting a process criteria. In other embodiments, a processing time standard is established, based on analysis of the relevant patterns. Yet other embodiments relate to controlling work on a workpiece, based on analysis of the relevant patterns. The invention may be either a process or a device including logic and resources to carry out a process.

Method and apparatus for chemical monitoring

Aspects of the present invention provide novel methods and devices for sampling gas, exciting the sampled gas to emit radiation and detecting in real time from the emitted radiation a plurality of wave bands of an emission spectrum. Energy used to excite the sampled gas may be adjusted based on the detected wave bands. A process may be controlled in real time based on the detected wave bands. Novel interfaces may be used to display portions of the detected wave bands. A known flow of a reference gas may be included in the flow of sampled gases and an unknown flow of an unknown flow gas determined.

Method and device utilizing plasma source for real-time gas sampling

The present invention relates to an apparatus and method for forming a plasma in the exhaust line of a primary process reactor. The plasma is generated in an inductive source () to examine the chemical concentrations of the waste or exhaust gas in vacuum lines that are below atmospheric pressure. The optical radiation emitted by the plasma is analyzed by an optical spectrometer () and the resulting information is used to diagnose, monitor, or control operating states in the main vacuum vessel.

Inductively coupled plasma spectrometer for process diagnostics and control

Method and device utilizing real-time gas sampling

A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enhanced chemical vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.

Parallel plate reactor and method of use

A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enchanced chemcial vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.

Method of plasma etching with parallel plate reactor having a grid

A parallel plate plasma type etching apparatus is provided with a temperature control chuck 44 so that elevated substrate temperatures are controlled. With an elevated substrate temperature, the reaction rate is increased. With positive temperature control, the likelihood of damage to the semiconductor devices is significantly reduced. The chuck is provided with a large number of equally spaced electrical heaters 72 and control of the heaters is by a temperature sensor 74.

Temperature controlled chuck for elevated temperature etch processing

Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive filter network is disclosed which performs the functions of coupling both power supplies to the electrode, isolating the low frequency power supply from the high frequency power supply and attenuating the undesired frequencies produced by mixing of the two frequencies in the non-linear load represented by the reactor.

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Petaluma, CA, United States of America

Gary B Powell