Photodigm Inc.

Other

Texas Instruments Corporation

Southern Methodist University

Oracle International Corporation

Triquint Semiconductor Corporation

Teramod LLC

Gary Alan Evans

Jay Bernard Kirk

Jerome K Butler

Taha Masood

Steven Gregory Patterson

Ashok V Krishnamoorthy

Xuezhe Zheng

Guoliang Li

Jin Yao

Jacob Meyer Hammer

Lily Y Pang

Nuditha Vibhavie Amarasinghe

Ruo-Hua He

Jennifer Lynn Dworak

Ping Gui

Scott McWilliams

John Mattis

Ralph Herbert Johnson

Spencer P Magleby

Kirk D Larson

Duane E Carter

Edward A Beam, Iii

Dubravko Ivan Babic

William H Davenport

Paul Saunier

Andy Turudic

Philip A Congdon

Ming-Yih Kao

David Michael Fanning

Walter Anthony Wohlmuth

Dennis A Cheney

Chris A Mattson

Ryan Larsen

Chad Lasson

Aaron Moulton

John O'Hearn

Zuhair Hilali

Duy Phan

Darren S Lee

David Alan Willis

Eric Norby

Rich Bennion

A device that is capable of eliminating a power trace that can be analyzed in a power analysis attack and serves as a highly effective countermeasure against power analysis attacks. The device comprising an optical source providing optical energy to an integrated circuit. An optical detector optically linked to the optical source and converts the optical energy from the optical source into electrical energy to power a secure circuit.

Powering an electronic system with an optical source to defeat power analysis attacks

The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.

Enhanced coupling strength grating having a cover layer

Method of making an enhanced coupling strength grating having a cover layer

Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator. The device is operated at a temperature range comprising a first temperature and a second temperature, wherein the second temperature is greater than the first temperature by at least 15 degrees Celsius.

Temperature insensitive integrated electro-absorption modulator and laser

Laser diodes are formed with an outcoupling grating between two separate distributed Bragg reflectors. The devices have gain regions located between the reflector gratings for pumping the active region. The outcoupling grating couples light out of the waveguide normal to the surface if the grating spacings are equal to an integer number of wavelengths of the light within the cavity. If the gratings are not such an integer number, the light is coupled out of the cavity off the normal.

Grating&#x2014;outcoupled surface-emitting lasers

An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating towards shorter or longer wavelengths allows kink-free, linear LI curves light output versus forward current) for grating-outcoupled surface-emitting lasers. Due to the detuning of the outcoupler grating, the outcoupled radiation emits two beams that deviate slightly from the normal axis. A design point may then be chosen where the power outcoupled by symmetric and antisymmetric modes cross and where the outcoupled power is independent of the phase variation.

Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating

A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Integrated high speed modulator for grating-outcoupled surface emitting lasers

A surface emitting semiconductor laser system having four cavities that couple light from a single aperture. Each of the four cavities overlaps at the outcoupling aperture. Each cavity is fabricated to resonate at a different central wavelength, outputting a different frequency of light, each of which can be independently modulated.

Multi-wavelength grating-outcoupled surface emitting laser system

A surface emitting semiconductor laser system having an outcoupling aperture on a central waveguide. At either end of the central waveguide are means for reflecting a plurality of different wavelengths of light such that multiple wavelengths are outcoupled through a single outcoupling aperture. Means are provided by which the different wavelengths can be independently modulated.

Chip-scale WDM system using grating-outcoupled surface-emitting lasers

A uniform coating is provided using surface features. Multiple ridges or other shapes are fabricated near an area of interest to allow for uniform coating in between the ridges. Areas at either ends of the ridges are left open to allow for excess pooling of photoresist liquid and to aid in obtaining uniform coating. The photoresist liquid or other coating fluid is applied to the sample and spun dry. A soft-bake process is performed to evaporate remaining solvents. An element, such as a diffractive, refractive, or reflective grating structure, is then formed in the area of interest using the uniform photoresist coating.

Coating thickness control using surface features

Grating-outcoupled surface-emitting lasers

A laser diode system is provided. The laser comprises first and second reflective gratings at each end of the laser. The laser further comprises an outcoupling grating between the first and second reflective gratings, wherein the outcoupling grating couples light out of the laser. The reflectors and outcoupling grating each have a unique wide-band reflective spectrum. A first laser cavity exists between the first and second reflective gratings. A second laser cavity exists between the first reflective grating and the outcoupling grating. A third laser cavity exists between the second reflective grating and the outcoupling grating, and a fourth laser cavity exists with in the outcoupling region. The overlap of reflective spectra determine the lasing wavelengths that reach resonance within each cavity. Wavelengths resonant in one cavity are suppressed in the others unless a wavelength is resonant in all cavities. This matching of mode intensities causes the outcoupled beam to be confined to a single wavelength.

Single-wavelength, unequal-length-multi-cavity grating-outcoupled surface emitting laser with staggered tuned distributed Bragg reflectors

An electronic/photonic integrated circuit in which grating-outcoupled surface-emitting lasers are used both to provide external emission out of the plane of the chip (through gratings), and also to feed optical power into photonic waveguides parallel to the plane of the chip. Transistors are fabricated in a common multilayer semiconductor body with the lasers.

Integrated grating-outcoupled surface-emitting lasers

Growing community of inventors

Plano, TX, United States of America

Gary Alan Evans