Allied Corporation

Honeywell International Inc.

Alliedsignal Inc.

Gary A West

Arunava Gupta

James T Yardley

Karl Wayne Beeson

Robert J Saccomanno

Ray H Baughman

Igor Palley

Ilan Golecki

James A Matrunich

Alex Lobovsky

Donald Lee Mittendorf

Ronald F Welch, Jr

Jeffrey P Donlan

A metal/dielectric construction having either an optically transmissive substrate adapted for channeling light therethrough, or a dielectric substrate, an optional adhesion-promoting layer composed of an oxide form of at least one metal or metalloid deposited onto the surface of the substrate, a layer composed of a highly reflective and/or electrically conductive/electromagnetic metal overlaying the adhesion-promoting layer, and a protective layer composed of a parylene polymer film formed over the metal layer.

Metallic coated dielectric substrates

Fiber spinning of two polymer compositions wherein one of the compositions contains carbon nanotubes produces structures such as fibers, ribbons, yarns and films of carbon nanotubes. The polymers are removed and stabilization of the carbon nanotube material is achieved by post-spinning processes. The advances disclosed herein enable the carbon nanotube composites to be used in actuators, supercapacitors, friction materials and in devices for electrical energy harvesting.

Composite material comprising oriented carbon nanotubes in a carbon matrix and process for preparing same

The present invention relates to a method for depositing a parylene polymer barrier coating on a polymeric substrate for improving the chemical resistance of the substrate. The method comprises the steps of thoroughly treating a surface portion of the substrate to remove any contaminants, depositing at least one layer of parylene polymer on the contaminant-free surface portion via chemical vapor deposition, and then annealing each of the at least one layer of parylene polymer for a sufficient time. The present invention also relates to a composition for a barrier coating on a polymeric substrate comprising at least one layer of parylene polymer bonded to the surface of the polymeric substrate. The substrate can be a silicone rubber keypad.

Method for depositing a barrier coating on a polymeric substrate and composition comprising said barrier coating

A method for producing a composite element by causing a stream of gaseous rhenium hexafluoride to flow onto a carbon substrate in a chemical vapor deposition reaction. A flow of hydrogen gas causes a reduction of the rhenium hexafluoride to rhenium metal to thereby deposit a uniform layer of rhenium metal onto the surface of the carbon substrate. A fine grain rhenium coating on carbon is produced having an average particle diameter of from about 0.1 to about 25 micrometers. The elements may be used alone or several of them may be bonded together into various articles. Such elements and articles are useful as light weight, high temperature strength, corrosive gas resistant structural elements.

Chemical vapor deposition of fine grained rhenium on carbon based

A diffusion bonding process for bonding one rhenium-coated carbonaceous body to another. The rhenium-coat surfaces 18,20 of the bodies are coated with ruthenium, and the bodies are diffusion bonded at the interface formed by adjoining ruthenium coats 22,24.

Process for bonding carbonaceous bodies

This invention relates to an improved method of depositing cobalt silicide films on a substrate by chemical vapor deposition at a temperature range of about 100.degree.-400.degree. C. By employing two separate precursors of, preferably, for cobalt, comprised of cobalt carbonyls having a vapor pressure sufficiently high to provide a cobalt stream to support chemical vapor deposition, and for silicon, comprised of silanes or halogenated silanes having a vapor pressure sufficient to support chemical vapor deposition, a cobalt silicide film is grown. The ratio of silicon to cobalt is controlled precisely by varying the substrate temperature while the process is being conducted. In a more specific aspect, the films are grown on substrates of either gallium arsenide or silicon. In the case of silicon, epitaxial growth of the cobalt silicide film is achieved by specific control of process parameters.

Method of growing cobalt silicide films by chemical vapor deposition

A method of producing ultrafine powders comprising metal silicide powder and the products produced by the method are disclosed. The ultrafine powders comprising metal silicide powders are ideally suited to form stable colloidal suspensions which are used in the production of conductive metal silicide containing films. The process employs gaseous reactants comprising a metal halide and a silicon-containing compound. The reactants are exposed to high intensity light to produce ultrafine powders. In addition to the production of metal silicide powders, the ultrafine powders may also include silicon powder and metal subhalide powder. The ultrafine powders are particularly suited for use in VLSI and VVLSI production.

Light induced production of ultrafine powders comprising metal silicide

A method of producing a thin film comprising a conductive metal silicide and the products produced therefrom are disclosed. The method is much less complex than methods employed in the prior art for producing conductive thin films and the method reduces substrate damage by maintaining processing temperatures at about 1,000.degree. C. or less. The process employs a stable suspension comprising ultrafine powders in a solvent. This suspension is deposited on a surface of a substrate and is subsequently heated to form a thin conductive film. The thin conductive film comprises polycrystalline metal silicide, preferably a refractory metal silicide, and may also contain silicon. Composites comprising the thin conductive films and a substrate are also disclosed. The process and products are particularly suited for use in VLSI and VVLSI production.

Production of conductive metal silicide films from ultrafine powders

Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.

Light induced chemical vapor deposition of conductive titanium silicide

Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.

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Dover, NJ, United States of America

Gary A West