USA As Represented by Secretary of the Navy

Other

Carnegie Mellon University

Gary A Prinz

Michael M Miller

James J Krebs

Mark B Johnson

Berend T Jonker

Jian-Gang Zhu

Clifford M Krowne

Konrad Bussmann

Youfeng Zheng

A magnetic memory storage device with at least one magnetic storage element comprising electrical addressing leads to inject electrical current directly through a single magnetic memory storage element. The number of electrical addressing leads is at least one more than the number of magnetic memory storage elements.

Method of addressing digital data

Addressing architecture for perpendicular giant magnetoresistance memory

A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium. The relative size of the magnetic particle and the magnetic sensing element and the location of the molecules of the first specific binding member on the magnetic sensing element are selected so that when the magnetic particle becomes immobilized with respect to the magnetic sensing element, the radial fringing field of the magnetic particle causes the magnetic moment of at least one layer of electrically conductive ferromagnetic material to shift from circular to radial, thereby causing a detectable change in the electrical resistance of the magnetic sensing element.

High efficiency magnetic sensor for magnetic particles

A method of making a high efficiency magnetic sensor for determining the presence or amount of an analyte in a test sample. The method typically includes providing a sensing device with a magnetic sensing element, exposing the sensing device to a fluid test medium suspected of containing an analyte and monitoring the resistance of the magnetic sensing element to detect any change in the electrical resistance of the magnetic sensing element in response to the immobilization of a magnetizable particle. The magnetic sensing element comprises at least one planar layer of electrically conductive ferromagnetic material having an initial state in which the material has a circular magnetic moment within the plane of the layer, a means to immobilize a magnetizable particle at a point along an axis that is perpendicular to the plane of the layer and passes through the center of the circular magnetic moment, and a means for detecting the change in the electrical resistance of each magnetic sensing element. The magnetic sensing element has molecules of a first specific binding member attached to it. The relative size of the magnetic particle and the magnetic sensing element are selected so that when the magnetic particle becomes immobilized with respect to the magnetic sensing element, the radial fringing field of the magnetic particle causes the magnetic moment of at least one layer of electrically conductive ferromagnetic material to shift from circular to radial, thereby causing a detectable change in the electrical resistance of the magnetic sensing element.

Method of making high efficiency magnetic sensor for magnetic particles

A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Hall effect device with multiple layers

A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

Conductive film layer for hall effect device

A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.

Testing current perpendicular to plane giant magnetoresistance multilayer devices

A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium. The relative size of the magnetic particle and the magnetic sensing element and the location of the molecules of the first specific binding member on the magnetic sensing element arc selected so that when the magnetic particle becomes immobilized with respect to the magnetic sensing element, the radial fringing field of the magnetic particle causes the magnetic moment of at least one layer of electrically conductive ferromagnetic material to shift from circular to radial, thereby causing a detectable change in the electrical resistance of the magnetic sensing element.

A device including a magnetic material having a magnetization configuration that is circular in a plane, and a word line for producing a magnetic field in the plane, the magnetic field being radial with respect to a point in the plane and within the circular magnetization configuration.

Magnetic device and method of forming same

A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations. Once the bit is set, the value of the determined by the relative alignment of the magnetic moments of the first and second ferromagnetic layers. This value may be read by applying an interrogating current across the memory element, perpendicular to the plane within which the magnetic moment of the first ferromagnetic layer is oriented, and observing the variation in resistance. These ferromagnetic elements may be fabricated using conventional photolithography. Groups of these ferromagnetic element may be organized into word trees and other arrays.

Ultra high density, non-volatile ferromagnetic random access memory

A memory architecture for a regular array of non-volatile ferromagnetic rom access annular memory elements which can be based on the giant magnetoresistance (GMR) effect. A first sense row in the array connects the memory elements with strips which are staggered so that each memory element is connected through its upper surface to the memory element on one side and through the lower surface to one on the other side. Running transverse to the first sense row is a word line made up of a series of wires passing in magnetic field producing proximity to the memory elements along a column of the array and not being in electrical contact with the memory elements. The strips of the word line are staggered so they similarly produce a meandering conductive pathway through the word line from one side of the array to the other in series. The wires of the word line can pass through the open core of the annular element or the wires can pass adjacent to the memory elements. A third addressing mechanism in the form of an additional bit line provides added flexibility for the magnetic switching. The bit line is arranged parallel to the sense row and the strips of the bit line are again staggered so that each wire is connected through its top contact to the wire on one side and through its bottom contact to the wire on the other side. This bit line can be used in combination with or in place of the sense row for magnetic switching when it is further used in combination with the word line. Magnetic switching can be done by the word line and the bit line without using the sense line current. In a further embodiment the memory element has an insulative nonmagnetic memory layer so the memory element becomes a magnetic tunnel junction.

Read/write memory architecture employing closed ring elements

A memory element has a sandwich structure in which rings of ferromagnetic material are spaced apart by a layer of a non-magnetic conductor (which is also typically a ring). These ferromagnetic rings will have differing magnetic hardness. At least one ring will be magnetically hard or antiferromagnetically-pinned. At least one other ring will be magnetically softer than the hard or antiferromagnetically-pinned ring. The non-magnetic conductor is at least thick enough to prevent essentially all exchange coupling between the ferromagnetic rings. Conducting leads provide current to pass through the ferromagnetic rings, perpendicular to magnetic moments in the ferromagnetic rings.

Annular GMR-based memory element

A giant magnetoresistant displacement sensor includes at least one layered structure. This layered structure includes a harder magnetic (ferromagnetic or antiferromagnetic) layer having a fixed magnetic state, a second, softer, magnetic layer, and a metal layer interposed between and contacting these two layers to prevent exchange coupling between the two layers. The sensor also includes one or more indexing magnets for inducing a domain wall, at a measurand position, between regions of nonaligned magnetic fields in the softer magnetic layer; and an ohmmeter for measuring electrical resistance between points on opposite sides of the structure. In operation, the indexing magnets for inducing a domain wall are positioned relative to the giant magnetoresistant strip. The resistance across the strip is measured, and from this resistance measurement the position of the domain wall is determined. The present invention is also a variable resistor, which is operated by positioning the magnets for inducing the domain wall at a selected position, to set the resistance across the strip to a desired value.

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Alexandria, VA, United States of America

Gary A Prinz