Atlantic Richfield Company

Siemens Solar Industries International

Gary A Pollock

Kim W Mitchell

James H Ermer

A thin film photovoltaic device comprises a metal back contact having a first p-type semiconductor film of CVD CIS thereon; a second, transparent, n-type semiconductor film of CVD zinc oxide on the CIS and a thin interfacial film of transparent, insulating zinc oxide between the p-type CIS film and the n-type metal oxide. The interfacial zinc oxide film is formed by depositing zinc hydroxide on the CIS from a solution of one of zinc sulfate, zinc chloride, and zinc acetate and complexing agents comprising ammonium hydroxide and TEA and annealing the deposit to convert the zinc hydroxide to form the zinc oxide.

Method of making thin film heterojunction solar cell

A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.

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Canoga Park, CA, United States of America

Gary A Pollock