Hewlett-packard Development Company, L.p.

Hewlett Packard Enterprise Development LP

Psiquantum Corp.

Hewlett-packard Company

Other

Psiwuantum, Corp.

Ian Hardcastle

Psiquanum, Corp.

Gary A Gibson

Zhiyong Li

Steven J Barcelo

Zhang-Lin Zhou

Xia Sheng

Huei Pei Kuo

Ansoon Kim

Shih-Yuan Wang

Alexandre M Bratkovski

Richard Stanley Williams

Warren Bruce Jackson

Richard H Henze

Chia-Ming Chang

Hung-Hsi Lin

Jianhua Yang

Mineo Yamakawa

Stephen Christopher Kitson

Nikhil Kumar

Chung Ching Yang

Mihai Dorian Vidrighin

Alison Chaiken

Dick Henze

John Paul Strachan

Krzysztof Nauka

Yoocharn Jeon

Patricia A Beck

Adrian Derek Geisow

Chung-Ching Yang

Gary Ray Ashton

Robert N Bicknell-Tassius

David A Fattal

Ning Ge

Sivapackia Ganapathiappan

Thomas C Anthony

Theodore I Kamins

Gregg Bernard Lesartre

Lihua Zhao

Manish Sharma

Henryk Birecki

Lung T Tran

Erik Ordentlich

Naveen Muralimanohar

Brent Buchanan

Duncan R Stewart

James Elmer Abbott, Jr

Heon Lee

Martin Foltin

Robert G Walmsley

Si-Ty Lam

Qiaodan Jin Stone

William M Tong

Michael John Regan

Hans S Cho

Suhas Kumar

Marvin S Keshner

Huei-Pei Kuo

Amit S Sharma

Bao-Sung Bruce Yeh

James Walter Pearson

Yoocham Jeon

Greg Astfalk

Takaaki Yagi

Lennie K Kiyama

Byungjoon Choi

Craig M Perlov

Steven L Neberhuis

Tim Taphouse

Alison Chalken

Krysztof Nauka

Chung C Yang

A waveguide structure includes a substrate and a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient. The waveguide structure also includes a first cladding layer at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient. The second cladding layer is coupled to the first cladding layer.

Active photonic devices incorporating high dielectric constant materials

An optical switch structure includes a substrate, a first electrical contact, and a first material having a first conductivity type electrically connected to the first electrical contact. The optical switch structure also includes a second material having a second conductivity type coupled to the first material, a second electrical contact electrically connected to the second material, and a waveguide structure disposed between the first electrical contact and the second electrical contact. The waveguide structure includes a waveguide core coupled to the substrate and including a core material characterized by a first index of refraction and a waveguide cladding at least partially surrounding the waveguide core and including a cladding material characterized by a second index of refraction less than the first index of refraction and an isotope-enhanced Pockels effect.

Active photonic devices with enhanced pockels effect via isotope substitution

An optical switch structure includes at least one optical input port and at least one optical output port. The optical switch structure also includes an optical waveguide structure including a waveguide core and a waveguide cladding The optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port. The waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient and the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.

An optical device includes a first waveguide that includes a plurality of first portions coupled with regions doped with first dopants, and a plurality of second portions coupled with regions doped with second dopants, distinct from the first dopants, the plurality of first portions being interleaved with the plurality of second portions. And the optical device includes a second waveguide located adjacent to the first waveguide for coupling light from the first waveguide to the second waveguide. The second waveguide includes a third portion coupled with a third region doped with the first dopants and a fourth portion coupled with a fourth region doped with the second dopants, wherein the first portion is located adjacent to the third portion and the second portion is located adjacent to the fourth portion.

Optical switches based on induced optical loss

The present disclosure provides a circuit that includes a first component and a plurality of superconducting wires thermally-coupled to the first component. The superconducting wires of the plurality of superconducting wires are arranged and configured such that a threshold superconducting current for each superconducting wire is dependent on an amount of heat received from the first component. The circuit further includes a dielectric material separating the plurality of superconducting wires from one another. A superconducting wire nearest the first component among the plurality of superconducting wires is more than a phonon mean free path of the dielectric material from the first component. The circuit further includes control circuitry electrically-coupled to the plurality of superconducting wires and configured to provide current to each of the plurality of superconducting wires.

Thermal measurements using superconducting materials

Active photonic devices with enhanced Pockels effect via isotope substitution

An optical switch structure includes a substrate, a first electrical contact, a first material having a first conductivity type electrically connected to the first electrical contact, a second material having a second conductivity type coupled to the first material, and a second electrical contact electrically connected to the second material. The optical switch structure also includes a waveguide structure disposed between the first electrical contact and the second electrical contact and comprising a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient and a waveguide cladding at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction and a second electro-optic. The first index of refraction is greater than the second index of refraction the first electro-optic coefficient is less than the second electro-optic coefficient

An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a portion of a first doped region doped with dopants of a first type and a portion of a second doped region doped with dopants of a second type that is different from the dopants of the first type.

A waveguide structure includes a substrate, a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction, and an isotope-enhanced cladding layer at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and an isotope-enhanced Pockels effect.

An optical switch structure includes a substrate, a first electrical contact, and a first material having a first conductivity type electrically connected to the first electrical contact. The optical switch structure also includes a second material having a second conductivity type coupled to the first material, a second electrical contact electrically connected to the second material, and a waveguide structure disposed between the first electrical contact and the second electrical contact. The waveguide structure includes a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient and a waveguide cladding at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.

An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.

A system includes an illumination source, a detector and a processor. The detector acquires spectral measurements of a sample under test under at least one varying condition. The processor processes the measurements to generate at least one spectral representation that includes Raman spectra and at least one spectral representation that includes non-Raman spectra.

Multiple spectral measurement acquisition apparatus and the methods of using same

A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.

Amorphous metal alloy electrodes in non-volatile device applications

In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.

Nano-scale oscillator exhibiting chaotic oscillation

Growing community of inventors

Palo Alto, CA, United States of America

Gary A Gibson