Caeleste Cvba

Gaozhan Cai

Bart Dierickx

Bert Luyssaert

Peng Gao

Robert Bilhorn

Qiang Yao

Koen Liekens

Dirk Van Aken

Jiaqi Zhu

Nick Witvrouwen

Ajit Kumar Kalgi

An imaging system for detecting one or more events in a pixel array. The imaging system comprises the pixel array and a processing area adjacent to the pixel array. The imaging system is configured to transfer the pixel information of a subgroup of pixels to the processing area and the processing area is configured to process the event information.

Imaging device for detecting sparse event information in a pixel array

A stacked image sensor comprises an array of tiles, each comprising a sensor array layer tile comprising a plurality of sensing elements for receiving radiation, one or more electronics layer tiles comprising at least one read-out circuit, connected to at least one subgroup of sensing elements of the sensor array layer tile, a photonics layer tile comprising at least one waveguide and one or more modulators, each connected to the one or more electronics layer tiles. The modulators are adapted for modulating an optical signal travelling within the at least one waveguide. The electronics layer tile comprises at least one driver for driving an optical modulator in the photonics layer tile in accordance with the signals received in each sensing element of the sensor array layer tile. At least one of the layer tiles (sensor array layer, electronics layer and/or photonics layer tiles) is implemented in a single integrated circuit.

Opto-electronic stacked sensor

The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.

Global shutter high dynamic range sensor

A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel.

Pixel with increased charge storage

Growing community of inventors

Antwerp, Belgium

Gaozhan Cai