Boe Technology Group Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Gaofei Shi

Na Zhao

Jie Song

Tianzhen Liu

Xufei Xu

Qiyu Shen

Yijun Wang

Jun Zhang

Qinghua Jiang

Ru Zhou

Chengcheng Wang

Chuanyan Wang

Gangqi Huang

Jianying Zhan

Embodiments of the present invention provide a display substrate, a fabricating method thereof, and a display panel. The display substrate includes a substrate, a display structure layer disposed on the substrate, and an alignment layer. A grating polarizing layer is disposed in the display structure layer, and an optical alignment direction of the alignment layer is parallel to or perpendicular to a transmission axis direction of the grating polarizing layer.

Display substrate and fabricating method thereof, and display panel

The present disclosure relates to a color film substrate, a method for manufacturing the color film substrate, a display device and a method for manufacturing the display device. The color film substrate comprises: a basal substrate; a color film layer arranged on a side of the basal substrate; a conductive layer arranged on another side of the basal substrate, the conductive layer comprising a plurality of conductive regions; each conductive region comprising a driving channel and an inducing channel; a first gap between the driving channel and the inducing channel in a same conductive region, a second gap between adjacent conductive regions; the first gap and the second gap correspond to a position of a black matrix in the color film layer; the black matrix being used for absorbing light, which light comes from a side of the basal substrate provided with the conductive layer, enters from the first gaps and the second gaps, and passes through the basal substrate. With the solution according to the embodiment of the present invention, the shadow elimination effect of a substrate can be ensured without adding or removing any layer structure for the color film substrate, thereby avoiding impacts on the other performances of the color film substrate.

Color film substrate, display device and method for manufacturing the same

The disclosure discloses a display substrate and a manufacturing method thereof, and a display device, the display substrate comprises a display region and a periphery region, a first electrode line is arranged at the periphery region, an insulating layer is arranged on the first electrode line, a first through hole is provided in the insulating layer at a position corresponding to the first electrode line, a contact electrode is provided in the first through hole, a second electrode line is arranged on the insulating layer, the second electrode line is electrically connected to the first electrode line through the contact electrode. In the disclosure, the contact electrode is provided between the first and second electrode lines, thus when the second electrode line is etched, the first electrode line is protected by the contact electrode from being damaged by etchant, thus saving production cost and improving production efficiency.

Display substrate and manufacturing method thereof, and display device

The present disclosure provides a touch display substrate and a touch display device, relates to a display field and solves a technical problem of lower sensibility of the touch display device. The touch display substrate comprises a plurality of touch electrodes, wherein the plurality of touch electrodes are divided into at least one touch electrode pair; each of the touch electrode pair includes first and second touch electrodes which are adjacent to each other; the first touch electrode comprises a first bending portion; the second touch electrode comprises second bending portion; and the second bending portions correspond to the first bending portions at positions. The touch display substrate according to the present disclosure may be applied to the touch display device.

Touch display substrate and touch display device

A touch screen, a fabrication method thereof and a display device are provided. The method comprises: forming a touch electrode on a light emission side of a display panel after the display panel is formed; and forming an organic transparent insulation layer on the light emission side of the display panel where the touch electrode has been formed. An absolute value of a difference between a refractive index of the organic transparent insulation layer and a refractive index of the touch electrode is less than or equal to a predetermined value.

Touch screen, fabrication method thereof and display device

Embodiments of the invention disclose a thin-film transistor having a channel structure that has an increased width-length ratio and a manufacturing method thereof, a display substrate and a display device. The thin-film transistor comprises a gate, a gate insulation layer and an active layer stacked on a substrate, the active layer is formed therein with a source region, a drain region and a channel region, a surface of the active layer facing the gate insulation layer is at least partially formed with a non-planar surface in the channel region, such that the non-planar surface of the active layer has a tortuous shape in a width direction of the channel region.

Thin-film transistor having channel structure with increased width-length ratio

The disclosed provides a thin film transistor, an array substrate, a display device and methods of manufacturing the thin film transistor and the array substrate. An active layer of the thin film transistor is formed of metallic oxide material, and a source electrode and a drain electrode of the thin film transistor both are formed of graphene or silver nanowire. The source electrode and the drain electrode are formed through an ink-jet printing process. Due to characteristics of graphene or silver nanowire, the manufacturing process of the thin film transistor may be simplified, the performance of the thin film transistor may be improved and the size of a channel region may be decreased. Further, an aperture ratio of the array substrate and the display device having such a thin film transistor may be increased.

Growing community of inventors

Beijing, China

Gaofei Shi