Texas Instruments Corporation

Halo Microelectronics International

Gangqiang Zhang

Angelo William Pereira

Vijayalakshmi Devarajan

Wenchao Qu

Zhao Fang

Jingwei Xu

Vaibhav Garg

Henry Litzmann Edwards

Rida Shawky Assaad

Xiaochun Zhao

Kae Ann Wong

Siang Tong Tan

Narayana Sateesh Pillai

Angelo W D Pereira

An integrated circuit includes a first field effect transistor (FET) and a second FET formed in or over a semiconductor substrate and configured to selectively conduct a current between a first circuit node and a second circuit node. The first FET has a first source, a first drain and a first buried layer all having a first conductivity type, and a first gate between the first source and the first drain. The second FET has a second source, a second drain and a second buried layer all having the first conductivity type, and a second gate between the second source and the second drain. A first potential between the first source and the first buried layer is configurable independently from a second potential between the second source and the second buried layer.

Reducing transistor breakdown in a power FET current sense stack

In a switching regulator driver, a sense circuit has a transistor current input and a sense circuit output. A logic circuit has a logic circuit input and first and second outputs. The logic circuit input is coupled to the sense circuit output. A counter has a counter clock input, a counter control input and a counter output. The counter clock input is coupled to the first output. The counter control input is coupled to the second output. The counter is configured to provide a count value at the counter output. A programmable drive strength circuit has a drive strength circuit input and a transistor control output. The drive strength circuit input is coupled to the counter output. The programmable drive strength circuit is configured to adjust a drive current at the transistor control output based on the count value.

System and method for adaptive gate drive current circuit

A low dropout regulator includes a first transistor having a first drain/source terminal coupled to an input terminal of a regulator, and a second drain/source terminal coupled to an output terminal of the regulator, a second transistor having a first drain/source terminal coupled to the input terminal of the regulator, and a second drain/source terminal coupled to the output terminal of the regulator through a resistor, and an error amplifier having an inverting input configured to receive a reference, a non-inverting input configured to detect an output voltage of the regulator, and an output coupled to gates of the first transistor and the second transistor.

Low dropout regulator and control method

An ESD protection apparatus includes a discharge resistor and a transistor connected in series between a first voltage rail and a second voltage rail, a first coupling capacitor, a diode and a first bias resistor connected in series between the first voltage rail and the second voltage rail, wherein a common node of the diode and the first bias resistor is connected to a gate of the transistor, and an ESD protection device connected between the first voltage rail and the second voltage rail.

ESD protection apparatus and control method

A signal processing apparatus includes a signal processing circuit configured to process a signal obtained from a voltage bus, a high voltage circuit configured to withstand a voltage stress when a high voltage is applied to the voltage bus, and a bypass circuit configured to bypass the high voltage circuit when a low voltage is applied to the voltage bus.

Signal processing apparatus and control method

An apparatus includes a first diode and a second diode connected in series between a first voltage terminal and a second voltage terminal, a switch connected between the first voltage terminal and the second voltage terminal, and a clamping threshold circuit connected between a common node of the first diode and the second diode, and a gate of the switch, wherein the clamping threshold circuit is configured such that in response to a voltage surge applied to the common node of the first diode and the second diode, the switch is turned on once the voltage surge is greater than a predetermined threshold.

Surge protection apparatus

An apparatus includes a resistor having a resistor terminal. The apparatus includes a capacitor coupled to the resistor terminal. The apparatus includes a transistor having a current terminal and a gate. The gate is coupled to the resistor terminal and coupled to the capacitor. The apparatus includes a comparator having a comparator input and a comparator output. The comparator input is coupled to the current terminal. The apparatus includes a latch having a latch input coupled to the comparator output.

Methods and apparatus to improve detection of capacitors implemented for regulators

Methods and apparatus for detecting zero-volt crossing in a field-effect transistor. A comparator compares a drain-to source voltage of the transistor to a threshold voltage. A gate voltage signal of the transistor is provided to a clock input of the comparator such that said gate voltage signal is used to latch a result of said comparison to an output of the comparator. A control function with respect to the transistor is performed based on the value of the comparator output.

VDS comparator rise P, fall P, on late, off late outputs for ZVC timing

High-resolution FET VDS zero-volt-crossing timing detection scheme in a wireless power transfer system

One example includes a switching power supply. The switching power supply includes a power stage, a feedback loop, and a simulated feedback error generator. The power stage provides an output signal in response to a switching signal. The feedback loop monitors the output signal and provides a feedback error signal to adjust the switching signal to regulate the output signal. The simulated feedback error generator temporarily provides a simulated feedback error signal during a transition period from the low power mode to a high power mode of the switching power supply until the feedback loop has enough time to provide the feedback error signal.

Power supply with low to high power transition mode

A system including a first power transistor including a gate, a second power transistor including a gate and connected in series with the first power transistor, wherein the connection between the transistors defines a switch node is disclosed. The system further includes a pulse width modulator (PWM) controller configured to assert control signals to the gates of the first and second power transistors, a high side sensing circuit coupled to the gate and a drain of the first power transistor. The system further includes a low side sensing circuit coupled to the gate and a drain of the second power transistor, and a track and hold circuit coupled to the high and low side sensing circuits and configured to couple sense signals from the high and low side sensing circuits.

Sense circuit for voltage converter

An overcurrent detector that includes a sense transistor connected to a sense resistor, a second transistor matched to the sense transistor and connected in parallel to a second resistor, and a voltage comparator coupled to the sense transistor and second resistor. The sense transistor is configured to connect in a same gate and source connection with a driver output transistor. The second transistor and second resistor are configured to receive a current reference and generate a voltage reference. The voltage comparator is configured to compare the voltage reference with a voltage drop across the sense resistor.

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Plano, TX, United States of America

Gangqiang Zhang