Samsung Electronics Co., Ltd.

Gang Zhang

Changhwa Kim

Hyuk Kim

Beomsuk Lee

Sang-Su Park

Junghun Kim

Jaesung Hur

In-gyu Baek

Sangwuk Park

Yong-Hyun Kwon

Hyung-yong Kim

Kyung-rae Byun

Shi Li Quan

Jin-yong Choi

Seug-gab Park

Kwang Soo Kim

Kyoung-Sub Shin

Jung Hun Kim

Chang Hwa Kim

Beom Suk Lee

Sang Su Park

Man Geun Cho

Sang Wuk Park

Won Bong Jung

Kyoung Sub Shin

Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

Image sensor

The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Three-dimensional image sensor based on structured light

Provided is an image sensor including a semiconductor substrate having a first surface and a second surface opposite each other, an organic photoelectric conversion device on the first surface of the semiconductor substrate, a through electrode structure connected to the organic photoelectric conversion device, and a pixel separation structure extending from the first surface toward the second surface of the semiconductor substrate. The semiconductor substrate may include a photoelectric conversion region in the semiconductor substrate. The pixel separation structure may surround the photoelectric conversion region when viewed in plan. The pixel separation structure may include a separation conductive pattern and a first sidewall dielectric pattern. The first sidewall dielectric pattern may continuously extend from between the separation conductive pattern and the semiconductor substrate to between the semiconductor substrate and a sidewall of the through electrode structure. A portion of the pixel separation structure penetrated by the through electrode structure.

A semiconductor device comprises a peripheral circuit region provided on a first substrate and including circuit devices and a contact plug extending on the first substrate in a vertical direction; a memory cell region provided on a second substrate disposed above the first substrate and including memory cells; and a through insulating region penetrating through the second substrate on the contact plug and covering an upper surface of the contact plug.

Semiconductor device and method of manufacturing the same

An image sensor includes a substrate which includes a first surface and a light-incident second surface facing the first surface, a first semiconductor photoelectric conversion element inside the substrate, an organic photoelectric conversion element on the second surface of the substrate, a first floating diffusion region on the first surface of the substrate, a first transfer transistor having a first end connected to the first semiconductor photoelectric conversion element and a second end connected to the first floating diffusion region, and a second transfer transistor having a first end connected to the organic photoelectric conversion element and a second end connected to the first floating diffusion region. The first semiconductor photoelectric conversion element, the first floating diffusion region, and the first transfer transistor and the second transfer transistor may be in a first pixel region of the substrate.

Image sensors

An image sensing device includes a photoelectric device disposed within a semiconductor substrate, and a separation structure and electrode structures disposed within the semiconductor substrate, and surrounding the photoelectric device. The separation structure includes a first conductive pattern, and a first insulating spacer between the first conductive pattern and the semiconductor substrate. A respective one of the electrode structures includes a second conductive pattern, and a second insulating spacer between the second conductive pattern and the semiconductor substrate. The first conductive pattern and the second conductive pattern are formed of the same conductive material.

Image sensing device

Provided is a semiconductor memory device. The semiconductor memory device includes a peripheral circuit gate pattern on a first substrate, an impurity region in the first substrate and spaced apart from the peripheral circuit gate pattern, a cell array structure on the peripheral circuit gate pattern, a second substrate between the peripheral circuit gate pattern and the cell array structure, and a via that is in contact with the impurity region and disposed between the first substrate and the second substrate. The via electrically connects the first and second substrates to each other.

Semiconductor memory devices

A semiconductor device includes gate stacks disposed on a substrate and spaced apart from each other in a first direction, with a separation region interposed between the gate stacks; channel regions penetrating through the gate stacks and disposed within each of the gate stacks; and a guide region adjacent to the separation region, penetrating through at least a portion of the gate stack, and having a bent portion that is bent toward the separation region.

Semiconductor device

A memory device includes a plurality of channels, a plurality of first charge storage sites coupled to first sides of respective ones of the channels, and a plurality of second charge storage sites coupled to second sides of respective ones of the channels. The first charge storage sites correspond to first memory cells and the second charge storage sites coupled to second memory cells. At least one of the channels is a dummy channel not connected to a bit line, and a blocking layer is contiguously formed around the first and second charge storage sites and the channels.

Growing community of inventors

Suwon-si, South Korea

Gang Zhang