Beijing Naura Microelectronics Equipment Co., Ltd.

Lenovo (beijing) Limited

Central Iron and Steel Research Institute

Beijing Nmc Co., Ltd.

Zhong Da National Engineering and Research Center of Continuous Casting Technology Co., Ltd.

Airbus (sas)

Legend Holdings Ltd.

Flight Inspection Center of Caac

Gang Wei

Jing Yang

Jing Jing Wei

Jinrong Zhao

Xiaoyang Cheng

Yu Zhang

Yang Zhang

Hui Zhang

Cheng Chen

Song Wang

Jianhua Liu

Meng Yang

Mei Wang

Xingfei Mao

Minglin Wang

Guodong Chen

Xiuqin Ji

Hongbiao Tao

Dongsan Li

Yong Gan

Yulin Peng

Xingcun Li

Shaohua Liu

Yali Fu

Yahui Huang

Chunzheng Yang

Yeming Wu

Hongbing Liang

Guozhong Peng

Changsuo Xi

Baosheng Wang

Luchun Yuan

Jinji Xu

Chen Niu

Chenyu Zhong

Li Wang

Tao Chen

Liang Zhang

Jing Wang

Chun Long Wang

Peng Chen

Wei Su

Kun Liu

Xing Chen

Peijun Ding

Ming Wu

Mengxin Zhao

Guibin Wang

Changle Guan

Haitao Yu

Longchao Zhao

Masaya Odagiri

Yanyan You

Xin Yue

Mingda Qiu

Mingming Song

Jinzhi Bai

Yangting Ou

Yachao Yu

Yicheng Li

Juan Feng

Bai Yang

Guilong Wu

Juanjuan Li

Hengyi Su

Guodao Shan

Yueping Hua

A coil structure includes a coil set including a first coil and a second coil. The first coil and the second coil are wound to form an annular area. A first end of the first coil and a first end of the second coil are close to an inner ring of the annular area. A second end of the first coil and a second end of the second coil are close to an outer ring of the annular area. The first end of the first coil is electrically connected to the first end of the second coil. A first projection-of the first coil on a plane perpendicular to an axial direction of the coil structure and a second projection of the second coil on the plane are mirror-symmetrical to each other.

Coil structure and plasma processing apparatus

A power control method of a lower RF power supply of semiconductor processing equipment includes, when a processing chamber starts semiconductor processing, with a predetermined power compensation equation and according to a pre-obtained first RF circuit parameter set of a reference chamber and a second RF circuit parameter set of a present processing chamber performing the semiconductor processing, obtaining a power compensation coefficient of the present processing chamber relative to the reference chamber, according to the power compensation coefficient and a power setting value of the lower RF power supply of the present processing chamber, calculating a power compensation value of the present processing chamber relative to the reference chamber, and controlling the lower RF power supply to output the power compensation value.

Power control method and device of lower radio frequency power supply and semiconductor processing equipment

The present disclosure provides a coil structure for generating plasma and semiconductor processing equipment. The coil structure includes at least one coil set. The coil set includes a first sub-coil set and a second sub-coil set that are coaxially arranged. The first sub-coil set includes at least one first planar coil located in a first plane. The second sub-coil set includes at least one second planar coil located in a second plane parallel to the first plane. The first planar coil and the second planar coil are connected in series. An orthogonal projection of the second planar coil on the first plane is mirror-symmetric or mirror-asymmetric to the first planar coil. The coil structure for generating the plasma and the semiconductor processing equipment of the present disclosure compensate for the difference in the current distribution of the coil in the radial direction.

Coil structure for generating plasma and semiconductor equipment

The present disclosure provides a power adjustment method of an upper electrode power supply of a semiconductor process apparatus. The method includes obtaining a processing load of an upper electrode power supply of a reference process chamber and a processing load of an upper electrode power supply of a current process chamber corresponding to semiconductor process step, when starting to perform a semiconductor process step, determining a power compensation coefficient for the current process chamber relative to the reference process chamber based on the processing load of the current process chamber and the processing load the reference process chamber, and controlling the upper electrode power supply to output compensation power. The compensation power is a product of the set power of the upper electrode power supply of the current process chamber corresponding to the semiconductor process step and the corresponding power compensation coefficient.

Power adjustment method of upper electrode power supply and semiconductor process apparatus

The present disclosure provides an impedance-matching method applied to a semiconductor process apparatus, an impedance-matching device, and the semiconductor process apparatus. The impedance-matching method includes adjusting a parameter value of an adjustable element of an impedance-matching device to a preset initial value at beginning of a process, when a radio frequency (RF) power supply is powered on, adjusting the parameter value of the adjustable element according to a pre-stored optimal matching path corresponding to the process, and adjusting the parameter value of the adjustable element using an automatic matching algorithm after reaching end time of the preset matching period until impedance-matching is achieved. The optimal matching path includes parameter values of the adjustable element corresponding to different moments in a preset matching period.

Impedance-matching method, impedance-matching device, and semiconductor process apparatus

The present disclosure provides a semiconductor process apparatus and a plasma ignition method. The semiconductor process apparatus includes a reaction chamber, an air inlet assembly configured to introduce the reaction gas into the reaction chamber, an upper electrode assembly configured to excite the reaction gas into the plasma, a monitor configured to monitor the electromagnetic radiation intensity of the plasma in the reaction chamber when the plasma is ignited, a controller configured to determine whether the electromagnetic radiation intensity monitored by the monitor reaches the preset intensity, if yes, determine that the plasma ignition is successful, and after the plasma ignition is successful, control the upper electrode assembly to perform the impedance matching of the first preset duration. In the present disclosure, the consistency of the process results may be improved to improve the uniformity of the products.

Semiconductor process apparatus and plasma ignition method

The present disclosure provides a semiconductor reaction chamber and an atomic layer plasma etching apparatus. The semiconductor reaction chamber includes a dielectric window and a reaction chamber body. The spray head is arranged between the dielectric window and the top wall of the reaction chamber body, and divides the plasma generation area into an upper strong plasma area and a lower weak plasma area. Moreover, a plurality of through-holes are distributed in the central area of the spray head and configured to allow the plasma in the strong plasma area to pass through. A first gas channel is arranged in an edge area of the spray head. The process reaction gas inlet member is located on a side where the gas inlet end of the first gas channel of the spray head is located. A second gas channel is arranged in the process reaction gas inlet member.

Semiconductor reaction chamber and atomic layer plasma etching apparatus

A control circuit for outputting a pulsed signal includes a switch circuit having a first terminal, a second terminal, a third terminal, a fourth terminal, a first control terminal, and a second control terminal, where the first terminal and the second terminal input the DC signal, the third terminal and the fourth terminal output the pulsed signal, the third terminal and the fourth terminal output the pulsed signal in response to the first control terminal and the second control terminal receiving the first signal, and stop outputting the pulsed signal in response to the first control terminal and the second control terminal receiving the second signal; and an energy storage circuit having two terminals connected to the first terminal and the second terminal of the switch circuit to store residual electric energy of the switch circuit when the switch circuit does not output the pulsed signal.

Control circuit, pulsed power supply system, and semiconductor processing equipment

A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.

System and method for pulse modulation of radio frequency power supply and reaction chamber thereof

The present disclosure provides an induction coil assembly and a reaction chamber. The induction coil assembly includes an induction coil arranged over a dielectric window of the reaction chamber. Two ends of the induction coil include a power input end and a ground end, respectively. A vertical spacing between the two ends of the induction coil and the dielectric window is greater than a vertical spacing between a portion between the two ends of the induction coil and the dielectric window. The induction coil and the reaction chamber provided by the present disclosure may reduce the capacitive coupling of the two ends of the induction coil by ensuring that the coupling strength of an RF magnetic field satisfies the requirement to reduce sputtering on the dielectric window and improve process results.

Induction coil assembly and reaction chamber

The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.

Control method of radiofrequency source

The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.

Lower electrode mechanism and reaction chamber

The present disclosure provides an adjustable capacitor comprising a ferroelectric dielectric layer, a first electrode and a second electrode disposed on opposite sides of the ferroelectric dielectric layer. The adjustable capacitor further comprises a first control electrode and a second control electrode insulated from the first electrode and the second electrode. The first control electrode and the second control electrode are configured to provide an electric field to the ferroelectric dielectric layer, to adjust a dielectric constant of the ferroelectric dielectric layer by controlling an electric field strength, thereby adjusting the capacitance between the first and the second electrodes. The present disclosure also provides an impedance matching device and a semiconductor processing apparatus. The adjustable capacitor, the impedance matching device and the semiconductor processing apparatus can adjust the capacitance of the adjustable capacitor in milliseconds, thereby accelerating the matching speed, shortening the matching time, and improving the processed result.

Adjustable capacitor, impedance matching device and semiconductor processing apparatus

A method for radio frequency impedance matching includes performing frequency scanning matching using first n pulse phases of first m pulse periods as a frequency scanning stage, and from an (m+1)-th pulse period to an M-th pulse period, maintaining a frequency scanning parameter of a pulse phase corresponding to each frequency scanning stage of each pulse period. The radio frequency includes M pulse periods, each pulse period includes N pulse phases, M and N are integers greater than 1, m and n are integers greater than 0, m&#x3c;M, n&#x2264;N, and i=1, 2, . . . , m. A start value of the frequency scanning parameter of each frequency scanning stage of an (i+1)-th pulse period is consistent with an end value of the frequency scanning parameter of each frequency scanning stage of the i-th pulse period. Accordingly, an end value of the frequency scanning parameter of each frequency scanning stage of an m-th pulse period matches a preset target value of the frequency scanning parameter.

Method and device for radio frequency impedance matching, and semiconductor processing apparatus

A radio frequency (RF) pulse matching method includes presetting a matching threshold and initializing a pulse count value to a pulse reference value and loading pulse power to an upper electrode and a lower electrode. The upper electrode includes an upper RF power supply and a corresponding upper matching device. The lower electrode includes a lower RF power supply and a corresponding lower matching device. The method further includes collecting a pulse signal of the pulse power and calculating a matching parameter according to the pulse signal, determining a magnitude of the matching parameter relative to the matching threshold and resetting the pulse count value, causing the upper matching device to perform matching on the upper RF power supply or the lower matching device to perform matching on the lower RF power supply, and repeating processes until the upper RF power supply and the lower RF power supply are matched.

Radio frequency pulse matching method and device thereof and pulsing plasma generation system

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Beijing, China

Gang Wei