Harbin Institute of Technology

Gang Lv

Yadong Wei

Xingji Li

Xiuhai Cui

Jianqun Yang

Tao Ying

Xiaodong Xu

The present invention provides a detection method for radiation-induced defects of an oxide layer in electronic devices. The detection method includes the following steps: selecting a semiconductor material to be prepared into a substrate; preparing a back electrode on an upper surface of the substrate; growing an oxide layer on the back electrode; etching one side of the oxide layer, and exposing an etched part out of the back electrode; preparing a front electrode on an upper surface of the oxide layer; forming a plurality of grooves in the front electrode, and distributing the plurality of grooves in a grid shape to prepare a test sample; and performing a radiation test on the test sample, and detecting radiation-induced defects. By using the detection method provided by the present invention, rapid identification and detection of electrons and holes are achieved.

Detection method for the radiation-induced defects of oxide layer in electronic devices

The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

Detection method for sensitive parts of ionization damage in bipolar transistor

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Harbin, China

Gang Lv