Memsensing Microsystems (suzhou, China) Co., Ltd.

Memsensing Microsystems Technology Co., Ltd

Other

Memsensing Microsystems Co., Ltd.

Soochow University

Nantong Textile and Silk Industrial Technology Research Institute

Suzhou Hsen-mez Automation Co., Ltd.

Taicang Medlineer Medical Device Technology Co., Ltd.

Gang Li

Wei Hu

Jia-Xin Mei

Ping Lv

Feng Li

Rui-Fen Zhuang

Jia Xin Mei

Kai Sun

Genlan Rong

Hong-Yuan Yang

Xingguo Wu

Chenglong Shao

Bin Xiao

Jiaxin Mei

Lu Li

Lirong Duan

A long-acting antibacterial anti-stenosis functional urethral stent and preparation method thereof is provided; the urethral stent is a tubular structure consisting of three layers: inner, middle and outer layers; the middle layer is a fabric tube; the outer layer is a silk fibroin film carrying anti-stenosis drugs; the inner layer is an antibacterial antifouling coating, consisting of chitosan-nanosilica arrays, villi, microvilli and antibacterial drugs; the preparation method includes: after making yarns into the fabric tube by textile molding, preparing the antibacterial and anti-fouling coating on the inner surface, and the silk fibroin film carrying anti-stenosis drugs on the outer surface respectively, to obtain the long-acting antibacterial anti-stenosis functional urethral stent. The method is simple, and the prepared urethral stent has a smooth surface and good biocompatibility, which has excellent properties such as radial compression force, circumferential expansion force, resistance to bending and torsion and elastic recovery.

Long-acting antibacterial anti-stenosis functional urethral stent and preparation method thereof

Disclosed are a bulk acoustic wave resonator and a fabrication method for the bulk acoustic wave resonator. The fabrication method includes: preparing a cavity with a top opening on a first silicon wafer; preparing an insulating layer on an upper surface of a second silicon wafer, and preparing a resonant piezoelectric stack on an upper surface of the insulating layer; preparing a first silicon dioxide layer on an upper surface of the resonant piezoelectric stack; bonding a surface where the top opening of the cavity is located with an upper surface of the first silicon dioxide layer; and preparing a lead out pad of the first electrode and the second electrode.

Bulk acoustic wave resonator and fabrication method for the bulk acoustic wave resonator

A package structure for a differential pressure sensor, and an electronic device are provided. The package structure includes: a substrate and a housing, an edge of the housing is fixed to a front side of the substrate and defines a first chamber with the substrate; and a pressure sensing element fixed to the front side of the substrate and disposed in the first chamber, the pressure sensing element is provided with a second chamber and a pressure sensing layer, the pressure sensing layer being disposed between the first chamber and the second chamber. The first chamber is connected with the outside via a first through hole, and the second chamber is connected with the outside via a second through hole.

Package structure for differential pressure sensor, and electronic device

A non-contact precision pneumatic injection valve includes a cylinder, a needle disposed inside the cylinder, and an adjustable stroke limiting component. The adjustable stroke limiting component includes a thread-toothed column threadedly engaging an upper end of the cylinder; a spring-limiting column disposed inside and fixedly attached to the thread-toothed column, the spring-limiting column having a first protrusion ring; a spring column axially movably disposed inside the spring-limiting column and having a second protrusion ring, a lower end of the spring column defining a stroke of the needle; and a spring. One end of the spring fixedly engages the first protrusion ring and the other end of the spring fixedly engages the second protrusion so that the spring keeps the spring column at least partially inside the spring-limiting column. The spring biases the lower end of the spring column toward the needle.

Non-contact precision pneumatic injection valve

A dual-diaphragm differential capacitive microphone includes: a back plate, a first diaphragm, and a second diaphragm. The first diaphragm is insulatively supported on a first surface of the back plate, where the back plate and the first diaphragm form a first variable capacitor. The second diaphragm is insulatively supported on a second surface of the back plate, where the back plate and the second diaphragm form a second variable capacitor. The back plate is provided with at least one connecting hole. The second diaphragm is provided with a recess portion recessed towards the back plate, where the recess portion passes through the connecting hole and is connected to the first diaphragm. The dual-diaphragm differential capacitive microphone achieves a higher signal-to-noise ratio.

Differential condenser microphone with double vibrating membranes

The invention relates to a capacitive MEMS microphone and a method for manufacturing the same. The microphone includes: a substrate; a first dielectric supporting layer on the substrate; a movable sensitive layer formed on the first dielectric supporting layer and having a movable diaphragm extending within the air; a backplate disposed over the movable sensitive layer and spaced from the movable diaphragm; a chamber recessed from and extending through the substrate and the first dielectric supporting layer; and an impact resisting device connecting to the movable diaphragm. The impact resisting device is exposed downwardly and disposed above the chamber. The movable sensitive layer has a number of anchors formed around the movable diaphragm, a number of flexible beams each of which is employed to connect one of the anchors to the movable diaphragm, and a bonding portion connecting to the anchor.

Capacitive micro-electro-mechanical system microphone and method for manufacturing the same

According to an embodiment of the present invention, a pressure sensor includes: a pressure sensing chip, which includes a substrate, a sensing film, an insulation layer and a first bonding pad; wherein the sensing film is on the substrate, and a sagging step is formed at one side of the substrate; the insulation layer is prepared on the sensing film and the substrate; the first bonding pad is prepared on the insulation layer on a bottom surface of the step, and is connected to the region of the substrate close to the sensing film via a lead wire.

Pressure sensor and packaging method thereof

The invention relates to an integrated chip with an MEMS and an integrated circuit mounted therein and a method for manufacturing the same. The method includes the steps of: S: providing a first chip, wherein the first chip comprises a first substrate, an MEMS component layer formed on the first substrate and comprising a first electrical bonding point disposed on MEMS the component layer; S: providing a second chip with an IC integrated circuit, wherein the second chip comprises a second lead layer and a second electrical bonding point; S: bonding the first electrical bonding point and the second electrical bonding point; S: processing a thinning operation for the bottom surface of the first substrate; and S: forming an electrical connection layer electrically connected to an external circuit on the bottom surface of the first substrate.

Integrated chip with micro-electro-mechanical system and integrated circuit mounted therein and method for manufacturing the same

A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base () having a first area () and a second area (); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer () and a medium insulation layer () extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer () above the SOI base; S5) forming a Poly Sil-xGex film () on the sacrificial layer; S6) forming a back cavity (); and S7) eroding the sacrificial layer to form a chamber () in communication with the back cavity. Besides, a chip () fabricated by the above method is also disclosed.

Chip with integrated circuit and micro-silicon condenser microphone integrated on single substrate and method for making the same

A feedback system for identifying an external force, includes an operation plate and a pressure-sensing unit. The pressure-sensing unit includes an elastic member supporting the operation plate and a pressure sensor inside the elastic member. The pressure sensor includes a pressure sensitive film. An inner side of the elastic member is filled with fluid material which acts on the pressure sensitive film. The operation plate is driven by the external force to be slant which extrudes the elastic member to deform so as to change fluid pressure of the fluid material limited in the elastic member, and such change of the fluid pressure can be sensed by the pressure sensitive film of the pressure sensor so as to identify the movement and the intensity of the external force.

Feedback system for identifying movement and intensity of external force

A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.

Transverse acoustic wave resonator, oscillator having the resonator and method for making the resonator

A surface mountable package includes a base and a cover with a cavity defined thereby, and an acoustic transducer unit received in the cavity. The cover includes a first metal ring to enclose the acoustic transducer unit. The base includes a second metal ring to press against the first metal ring in order to form a metal shielding area. First and second metal connecting paths are formed electrically connected to the metal shielding area and the acoustic transducer unit, respectively. Besides, two pairs of first and second surface mountable metal electrodes are electrically connected to the first and the second metal connecting paths, respectively. As a result, the package can be selectively double surface mountable to a user's circuit board via the metal electrodes of the base or the metal electrodes of the cover.

Package for micro-electro-mechanical acoustic transducer with improved double side mountable electrodes

A structure with an integrated circuit (IC) and a silicon condenser microphone mounted thereon includes a substrate having a first area and a second area. The IC is fabricated on the first area in order to form a conducting layer and an insulation layer. Both the conducting layer and the insulation layer further extend to the second area. The insulation layer is removed under low temperature in order to expose the conducting layer on which the silicon condenser microphone is fabricated. The silicon condenser microphone includes a first film layer, a connecting layer and a second film layer under a condition that the connecting layer connects the first and the second film layers. The first film layer and the second film layer act as two electrodes of a variable capacitance.

Method of manufacturing a structure with an integrated circuit and a silicon condenser microphone mounted on a single substrate

An electrostatic loudspeaker includes a backplate having a metal film acting as one electrode of a capacitor and defining a number of sound apertures therein; a diaphragm insulatively spaced a distance from the backplate to form the capacitor; the diaphragm comprising a metal film acting as the other electrode of the capacitor; a back chamber having a substrate and an insulative spacer for joining edge portions of the diaphragm and the substrate; a driving circuit element for converting electrical signals from exterior input pads into driving signals to drive the diaphragm to vibrate and sound; the driving circuit element being mounted on an inner surface of the substrate and being accommodated in the back chamber; and a first, second and third connection paths for respectively electrically connecting the driving circuit element with the two electrodes of the capacitor, and the exterior input pads. An electrostatic loudspeaker with two backplates is also disclosed.

Electrostatic loudspeaker

A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

Growing community of inventors

Suzhou, China

Gang Li