Alta Devices, Inc.

Google Inc.

Utica Leaseco, LLC

Raxium, Inc.

Tokyo Electron Limited

California Institute of Technology

Gang He

Gregg Higashi

Thomas J Gmitter

Andreas G Hegedus

Melissa J Archer

Harry A Atwater

Brendan M Kayes

Isik C Kizilyalli

James Richard Dodd, Jr

Richard Peter Schneider, Jr

Lori D Washington

Khurshed Sorabji

Andrew Victor Jones

Roger Hamamjy

Joseph Hsiao-Tien Han

Brian J Brown

Brian Hayes Burrows

Sylvia Spruytte

Stewart Sonnenfeldt

Nikhil Jain

I-Kang Ding

Linlin Yang

Liguang Lan

Laila S Mattos

Andrew James Ritenour

Ileana Rau

Sheila Hurtt

Claudio Canizares

David P Bour

Wei Liu

Junwei Bao

Feng Quan Liu

Vi Vuong

Daniel Guilford Patterson

Hong Qiu

Jeffrey Alexander Chard

Siew Neo

Christopher Earl France

Yan Zhu

Hemalatha Erva

Aurelien Jean Francois David

Erhong Li

Rose Twist

Miao Liu

David Berkstressor

Sean Sweetnam

Jose Corbacho

Chris France

Michael Anthony Klug

Dan Wheeler Patterson

Benjamin Leung

Miao-Chan Tsai

Shawn Scully

Michael Andres

Paul Goddu

Richard Schneider

Craig Peters

Melissa Archer

Steve Johnson

Richard Peter Schneider

James Richard Dodd

Linguang Lan

Dan Patterson

A method for transferring one or more clusters of micro-LEDs to a display panel includes fabricating or loading a plurality of micro-LED clusters comprising two or more micro-LEDs onto a substrate, and positioning the substrate in a first position. At least a first micro-LED cluster is aligned with at least a first electrical connector on a display panel. The method also includes lowering the substrate toward the display panel such that the first micro-LED cluster contacts the first electrical connector, and releasing the first micro-LED cluster from the substrate.

Method for display manufacturing using groups of micro-LEDs and micro-LED arrays

The disclosure describes various aspects of an architecture for light emitting elements in a light field display. In an aspect, a light field display can include multiple picture elements (e.g., super-raxels), where each picture element includes multiple sub-picture elements monolithically integrated on a same semiconductor substrate. Each sub-picture element has a respective light steering optical element and includes an array of light emitting elements (e.g., sub-raxels) that produce the same color of light. The light steering optical element can include at least one microlens, at least one grating, or a combination of both. Separate groups of light emitting elements can be configured and a directional resolution of the light field display can be based on the number of groups. The light field display also includes electronic means configured to drive the light emitting elements in each sub-picture element.

Architecture for light emitting elements in a light field display

Methods and devices are presented for transforming a layout of a densely packed grid of micro-LED light emitters to a layout of a square rectilinear pixel grid to achieve compatibility with hardware and software used in imaging and display technologies. In particular, a pattern of regular hexagonal emitter cells for fabrication on a III-nitride substrate can be transformed to a square pixel array of irregular hexagonal trichrome pixels that are readily addressable. Separation between adjacent trichrome pixels, and between their constituent emitters, can be established for overlay tolerance, while maintaining a cell packing density of about 70% and a pixel pitch of about 4.0 μm. Wavelength and quantum efficiency properties are shown to depend on optical current density, which can be determined by the emitter area specified in the grid layout.

Trichrome pixel layout

A display device based on micro light emitting diodes (microLEDs) includes a plurality of chiplets. Each chiplet includes one or more raxels, each raxel including a plurality of microLEDs supported on a substrate. The chiplet also includes a micro integrated circuit (microIC) electronically connected with the one or more raxels. MicroIC includes a plurality of interconnects supported on a backplane such that, when connected with the raxel, microIC may be used to electrically drive each one of the MicroLED of the raxel. In an embodiment, a plurality of chiplets are disposed on a display substrate to for an auto-view horizontal parallax only 3D display.

High density pixel arrays for auto-viewed 3D displays

The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.

Monolithic integration of different light emitting structures on a same substrate

The disclosure describes various aspects of backplanes, including unit cells, architectures, and operations. In an aspect, a backplane unit cell is described that includes first and second switches, a storage element, a comparator, a source (e.g., a current or voltage source), where the source generates a drive signal to control light emission of a selected one of the light emitting elements in a display, and where the drive signal is based on a power signal selected by the second switch. In another aspect, a device is described that includes a backplane configured in an active matrix topology including multiple data columns and multiple row selects; and a set of electrical contacts associated with the active matrix topology and configured to electrically couple the backplane with the display, the display having multiple light emitting elements configured in a passive matrix topology. Methods of operation of the backplane are also described.

Backplane configurations and operations

A backplane for controlling a display is disclosed. The backplane includes a plurality of tiles formed into an array. Each of the plurality of tiles includes a plurality of complementary metal-oxide-semiconductor backplane dies. Edges of the backplane dies that form a perimeter of the array include electrical connections that direct electrical signals to at least one of the CMOS backplane dies. A display assembly is also disclosed wherein the display assembly includes a backplane having an array of tiles. Each tile includes a plurality of electrically coupled CMOS backplane dies, where edges of the tiles that form an outer perimeter of the array include electrical connections directing electrical signals to one or more of the plurality of CMOS backplane dies. The display assembly further includes at least one light emitting diode array electrically coupled with at least one tile.

Display backplane including an array of tiles

A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching

A display device includes a substrate includes a first emitter and a second emitter thereon. The first emitter includes a first lower active quantum well (QW) region that has a first emission spectrum spanning a first spectral range. The second emitter includes (i) an upper active QW region that has a second emission spectrum spanning a second spectral range that is distinct from the first spectral range, (ii) a second lower active QW region having the first emission spectrum and being located between the upper active QW region and the substrate, and (iii) a barrier layer between the second lower active QW region and the upper active QW region for suppressing emission of the second lower active QW region.

Display devices with multiple emitters

The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

Light-emitting diodes with integrated optical elements

A display system includes (i) a plurality of picture elements supported on a single semiconductor substrate and (ii) a backplane including electronic circuitry supported thereon and electronically connected with the picture elements. Each picture element includes a light steering optical element and an array of light emitting elements. The array of light emitting elements includes a first set, a second set, and a third set of inorganic LEDs that (i) are monolithically integrated on the single semiconductor substrate and (ii) emit, respectively, light at a first, a second, and a third wavelength, which are mutually distinct. The light steering optical element is configured for steering the light from the first set, second set, and third set of LEDs in a predetermined direction. The electronic circuitry is configured for individually driving each light emitting element of the array of light emitting elements.

Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 &#x3bc;m/hr or greater, for example, about 40 &#x3bc;m/hr, about 50 &#x3bc;m/hr, about 55 &#x3bc;m/hr, about 60 &#x3bc;m/hr, about 70 &#x3bc;m/hr, about 80 &#x3bc;m/hr, and about 90-120 &#x3bc;m/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Methods for high growth rate deposition for forming different cells on a wafer

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Cupertino, CA, United States of America

Gang He