The University of New Mexico

Other

Ganesh Balakrishnan

Larry R Dawson

Diana L Huffaker

Christos G Christodoulou

Sang M Han

Youssef Tawk

Jerome V Moloney

Andrew Aragon

Olga Lavrova

Adam Alexander Hecht

Erin Ivey Vaughan

Christopher Hains

Victor Hasson

Sameer D Hemmady

Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).

High quality AlSb for radiation detection

A device includes a body and a rechargeable battery positioned within the body. A solar cell is coupled to the body and in communication with the battery. A connector is coupled to the body and configured to engage a corresponding connector of a fiber optic cable.

Fiber coupled solar cell modules for concentrated operation in consumer electronics applications

Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.

Multi-source optimal reconfigurable energy harvester

Various embodiments provide methods for forming a diamond heat spreader and integrating the diamond heat spreader with a heat source without generating voids at the interface. In one embodiment, a semiconductor layer can be epitaxially formed on a diamond substrate having a desirably low surface root mean square (RMS) roughness. The semiconductor epi-layer can be used as an interface layer for bonding the diamond substrate to the heat source to provide efficient heat spreading.

Semiconductor epitaxy on diamond for heat spreading applications

Various embodiments provide materials and methods for an optically pumped switch device, an optically pumped reconfigurable antenna system (OPRAS), and their related antenna devices. In one embodiment, the switch devices and the antenna devices can have a photoconductive cell. The photoconductive cell can include a semiconductive substrate that is conductive to reflect a radio frequency (RF) signal in response to an optical signal.

Optically pumped reconfigurable antenna systems (OPRAS)

Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.

Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys

Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon.

Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si

Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further includes forming a crystallographic nucleation layer by growth and coalescence of the plurality of quantum dots, wherein the nucleation layer is essentially free from vertically propagating defects. The method using quantum dots can be used to overcome the restraints of critical thickness in lattice mismatched epitaxy to allow effective integration of various existing substrate technologies with device technologies.

Growing community of inventors

Albuquerque, NM, United States of America

Ganesh Balakrishnan