Infineon Technologies Ag

Osram Opto Semi-Conductors Gmbh Co. Ohg

G&uuml;nter Reuscher

Frank Fischer

Gottfried Landwehr

Thomas Litz

Hans-J&uuml;rgen Lugauer

Markus Keim

Thierry Baron

Ulrich Zehnder

Andreas Waag

Hans-Peter Steinbr&uuml;ck

Mario Nagelstrasser

An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.

Optoelectronic semiconductor component

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be&mdash;Se configuration.

II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.

Semiconductor laser component

Growing community of inventors

Würzburg, Germany

Günter Reuscher

Growing community of inventors

Würzburg, Germany

G&uuml;nter Reuscher

Günter Reuscher