Infineon Technologies Ag

G&uuml;nter Ehrler

Thomas Bever

Stephan Schmitt

The invention relates to a semiconductor sensor having a base element (,) and at least one deformation element (,). The deformation element (,) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (,) that are doped with a dopant of the opposite conductivity type are located in the deformation element (,). The deformation element (,) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (,).

Growing community of inventors

Holzkirchen, Germany

Günter Ehrler

Growing community of inventors

Holzkirchen, Germany

G&uuml;nter Ehrler

Günter Ehrler