Other

Commissariat a L'energie Atomique

G&eacute;rald Dujardin

Patrick Soukiassian

Andrew Mayne

Christian Brylinski

Fabrice Amy

Hanna Enriquez

Fabrice Semond

A highly oxygen-sensitive silicon layer ( ) is formed on a substrate ( ) of, for example, SiC. The layer ( ) has a 4&times;3 surface structure. The silicon layer ( ) is deposited on a surface of the substrate ( ) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.

Silicon layer highly sensitive to oxygen and method for obtaining same

Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.

Very long and highly stable atomic wires, method for making these wires, application in nano-electronics

Growing community of inventors

Châtenay Malabry, France

Gérald Dujardin

Growing community of inventors

Châtenay Malabry, France

G&eacute;rald Dujardin

Gérald Dujardin