Ati Technologies Ulc

Xilinx, Inc.

Advanced Micro Devices Corporation

General Electric Company

Ati Technologies Inc.

Advanced Micro Device, Inc.

Xilinix, Inc.

Gamal Refai-Ahmed

Suresh Ramalingam

Bryan Black

Michael Zhouying Su

Jaspreet Singh Gandhi

Maxat Touzelbaev

Henley Liu

Brian Philofsky

Tien-Yu Lee

Anthony Torza

Christian M Giovanniello

Mohsen Hossein Mardi

Ivor G Barber

John Anthony Vogel

Cheang-Whang Chang

Yizhang Yang

Seth Prejean

Chi-Yi Chao

Hoa Lap Do

Robert A Wiley

Joe Siegel

Jim E Loro

Arun Virupaksha Gowda

Hendrik Pieter Jacobus De Bock

Yogen Vishwas Utturkar

Volker Aue

David Mulford Shaddock

Myongseob Kim

David Peter Robinson

Nima Osqueizadeh

Ferdinand F Fernandez

Salim Lakhani

Roger R Schmidt

Yohan Usthavia Frans

Hong Shi

Sandip Maity

Mayank Raj

Boon Yong Ang

Inderjit Singh

Brendan Farley

Lei Fu

Nui Chong

David M Mahoney

Hong-Tsz Pan

Bryan Patrick Whalen

Dales Morrison Kent

Ying Zhou

Suresh Parameswaran

Chuan Xie

Michael Bienek

Nael Zohni

Christian Michael Giovanniello, Jr

Joseph R Siegel

Hui-Wen Lin

Xiaohua H Sun

Siow Chek Tan

Ho Hyung Lee

Toshiyuki Hisamura

Lik Tsang

Jonathan Chang

Nagadeven Karunakaran

Ken Chang

Arun Kumar Varadarajan Rajagopal

Daniel Elftmann

Matthew A Ferguson

David Tan

Ronnie Brandon

Stanley Ossias

John Shaw

Adrian Fung

Huayan Wang

Steven Chan

A Mei Lan Shepherd-Murray

Ross Lau

Scott McCann

Jens Weis

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Semiconductor chip with redundant thru-silicon-vias

Some examples described herein provide for a heterogeneous integration module (HIM) that includes a thermal management apparatus. In an example, an apparatus (e.g., a HIM) includes a wiring substrate, a first component, a second component, and a thermal management apparatus. The first component and the second component are communicatively coupled together via the wiring substrate. The thermal management apparatus is in thermal communication with the first component and the second component. The thermal management apparatus has a first thermal energy flow path for dissipating thermal energy generated by the first component and has a second thermal energy flow path for dissipating thermal energy generated by the second component. The first thermal energy flow path has a lower thermal resistivity than the second thermal energy flow path.

Heterogeneous integration module comprising thermal management apparatus

An antenna assembly is provided having passive cooling elements that enable compact design. In one example, an antenna assembly is provided that includes a heat sink assembly having an interior side and an exterior side, an antenna array, an antenna circuit board, and a radome. The antenna circuit board includes at least one integrated circuit (IC) die. The IC die has a conductive primary heat dissipation path to the interior side of the heat sink assembly. The radome is coupled to the heat sink assembly and encloses the antenna circuit board and the antenna array between the radome and the heat sink assembly. The heat sink assembly includes a metal base plate and at least a first heat pipe embedded with the metal base plate. The first heat pipe is disposed between the metal base plate and the IC die.

Radome with integrated passive cooling

A chip package assembly and method for fabricating the same are provided which utilize a plurality of electrically floating extra-die heat transfer posts for improved thermal management. In one example, a chip package assembly is provided that includes a substrate, a first integrated circuit (IC) die, and a first plurality of electrically floating extra-die conductive posts. The substrate has a first surface and an opposing second surface. The first integrated circuit (IC) die has a first surface and an opposing second surface. The second surface of the first IC die is mounted to the first surface of the substrate. The first plurality of electrically floating extra-die conductive posts extend from the first surface of the first IC die to provide a heat transfer path away from the first IC die.

Stacked silicon package assembly having vertical thermal management

In one example, a method includes providing a first side of a semiconductor substrate with a plurality of transistors, etching a second side of the substrate, opposite the first side, with a pattern of trenches, the trenches having a pre-defined depth and width, and providing the etched semiconductor substrate in a package. In one example, the predefined depth and width of the trenches is such so as to increase the surface area of the second side of the substrate by at least 20 percent. In one example, the method also includes providing a layer of a thermal interface material (TIM) on the second side of the substrate, including to fill at least a portion of the trenches.

Thermal enablement of dies with impurity gettering

A heat exchanger and an antenna assembly having the same are described herein that enable a compact antenna design with good thermal management. In one example, a heat exchanger is provided that includes tube-shaped body. A main cooling volume is formed between the top and bottom surfaces proximate to the outside wall. The main cooling volume has an inlet formed through the top surface and an outlet formed through the bottom surface. A return volume is formed adjacent the inside diameter wall and is circumscribed by the main cooling volume. The return volume has an outlet formed through the top surface and an inlet formed through the bottom surface. One or more exterior fins are coupled to an exterior side of the outside wall. A plurality of fins extend into the main cooling volume. A plurality of inner fins extend into a passage from the inside diameter wall.

Remote active cooling heat exchanger and antenna system with the same

A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

A cooling plate assembly and electronic device having the same are provided which utilize active and passive cooling devices for improved thermal management of one or more chip package assemblies included in the electronic device. In one example, a cooling plate assembly is provided that includes a cooling plate having a first surface and an opposing second surface, a first active cooling device coupled to the first surface of the cooling plate, and a first passive cooling device coupled to the second surface of the cooling plate.

Thermal heat spreader plate for electronic device

A chip package assembly and method for fabricating the same are provided which utilize a plurality of extra-die heat transfer posts for improved thermal management. In one example, a chip package assembly is provided that includes a first integrated circuit (IC) die mounted to a substrate, a cover disposed over the first IC die, and a plurality of extra-die conductive posts disposed between the cover and substrate. The extra-die conductive posts provide a heat transfer path between the cover and substrate that is laterally outward of the first IC die.

Stacked silicon package assembly having thermal management

An electronic device is provided that balances the force applied to temperature control elements such that stress within components of the electronic device can be effectively managed. In one example, an electronic device is provided that includes a printed circuit board (PCB), a chip package, a thermal management system, a thermal spreader, and first and second biasing members. The chip package is mounted to the PCB. The thermal management system and spreader are disposed the opposite of the chip package relative to the PCB. The first biasing member is configured to control a first force sandwiching the chip package between the thermal spreader and the PCB. The second biasing member is configured to control a second force applied by the thermal management system against the thermal spreader. The first force can be adjusted separately from the second force so that total forces applied to the chip package and PCB may be effectively balanced.

Force balanced package mounting

Some examples described herein provide for three-dimensional (3D) thermal management apparatuses for thermal energy dissipation of thermal energy generated by an electronic device. In an example, an apparatus includes a thermal management apparatus that includes a primary base, a passive two-phase flow thermal carrier, and fins. The thermal carrier has a carrier base and one or more sidewalls extending from the carrier base. The carrier base and the one or more sidewalls are a single integral piece. The primary base is attached to the thermal carrier. The carrier base has an exterior surface that at least a portion of which defines a die contact region. The thermal carrier has an internal volume aligned with the die contact region. A fluid is disposed in the internal volume. The fins are attached to and extend from the one or more sidewalls of the thermal carrier.

Three-dimensional thermal management apparatuses for electronic devices

Micro devices having enhanced through printed circuit board (PCB) heat transfer are provided. In one example, a micro device is provided that includes a PCB, a thermal management device, a chip package, a bracket, and a plurality of extra-package heat conductors. The chip package has a first side facing the thermal management device and a second side mounted to a first side of the PCB. The bracket is disposed on a second side of the PCB that faces away from the chip package. The plurality of extra-package heat conductors are disposed laterally outward of the chip package and provide at least a portion of a thermally conductive heat transfer path between the bracket and the thermal management device through the PCB.

Micro device with through PCB cooling

A chip package assembly and method for fabricating the same are provided which incorporate phase change materials within the chip package assembly for improved thermal management. In one example, a chip package assembly is provided that includes a substrate, a first integrated circuit (IC) die stacked on the substrate, a dielectric filler layer, a cover and a phase change material. The phase change material is sealed within a recess formed between the first IC dies and the cover.

Stacked silicon package assembly having thermal management using phase change material

A chip package assembly and method for fabricating the same are provided which utilize a plurality of electrically floating heat transfer structures for improved thermal management. In one example, a chip package assembly is provided. The chip package assembly includes a substrate, a first integrated circuit (IC) die and a plurality of electrically floating conductive heat transfer structures. The substrate has a first surface and an opposing second surface. The first IC die has a first surface, an opposing second surface, and four lateral sides. The second surface of the first IC die is mounted to the first surface of the substrate. The plurality of electrically floating conductive heat transfer structures extend in a first direction defined between the first and second surfaces of the first IC die. A first conductive heat transfer structure of the plurality of electrically floating conductive heat transfer structures are part of a first conductive heat transfer path having a length in the first direction at least as long as a distance between the first and second surfaces.

Examples of the present disclosure provide example Chip Scale Packages (CSPs). In some examples, a structure includes a first integrated circuit die, a shim die that does not include active circuitry thereon, an encapsulant at least laterally encapsulating the first integrated circuit die and the shim die, and a redistribution structure on the first integrated circuit die, the shim die, and the encapsulant. The redistribution structure includes one or more metal layers electrically connected to the first integrated circuit die.

Chip scale package (CSP) including shim die

Growing community of inventors

Markham, Canada

Gamal Refai-Ahmed