Globalfoundries U.S. Inc.

Galla Kiran Kumar

Navneet Jain

Romain Feuillette

Heather Lazar

Brenda Lanza

Structures for a memory device and methods of forming a structure for a memory device. The structure comprises a first transistor including a first gate structure and a first source/drain region, a second transistor including a second gate structure and a second source/drain region, and a capacitor including a first capacitor plate directly coupled to the first source/drain region, a second capacitor plate, and a capacitor dielectric layer between the first capacitor plate and the second capacitor plate.

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Ongole, India

Galla Kiran Kumar