Sun Microsystems, Inc.

Wave Semiconductor, Inc.

Wave Computing, Inc.

Cold Brick Semiconductor, Inc.

Gajendra Prasad Singh

Joseph I Chamdani

Aparna Ramachandran

Claude R Gauthier

Brian W Amick

Ishwardutt Parulkar

Sridhar Narayanan

Shree Kant

Tri K Tran

Dong Joon Yoon

Jaya Prakash Samala

Renu Raman

Rabin Sugumar

Aninda K Roy

Shaishav A Desai

Priya Ananthanarayanan

Samudyatha Suryanarayana

Roger Carpenter

Miao Rao

Vidyasager Ganesan

Richard Shaw Terrill

Disclosed embodiments select a proper hum frequency reference by utilizing one or more functional logic circuits within a cluster. The slowest logic circuit is determined, and an instance of that logic circuit is used in timing circuitry for the cluster. Multiple logic circuits with similar characteristics are incorporated into the timing circuit. Each cluster is interconnected to a second level timing circuit. Each cluster inputs timing information into the second level timing circuit. The second level timing circuit then determines when the next cycle, or tic, of the self-generated clock starts, and the process repeats, providing a self-generated clock signal.

Hum generation using representative circuitry

Multi-threshold flash Null Convention Logic (NCL) includes one or more high threshold voltage transistors within a flash NCL gate to reduce power consumption due to current leakage by transistors of the NCL gate. High-threshold voltage transistors may be added and/or may be used in place of one or more lower voltage threshold transistors of the NCL gate. A high-Vt device is included in the pull-up path to reduce power when the flash NCL logic gate is in the null state.

Multi-threshold flash NCL logic circuitry with flash reset

A semiconductor device with reduced leakage current and a method of manufacturing these reduced leakage current semiconductor devices are disclosed. The reduced leakage current semiconductor devices may be used for both static circuits and dynamic circuits. The reduced leakage current semiconductor devices reduce leakage current in the device when the node is not transitioning which occurs more than 95% of the time.

Semiconductor device with reduced leakage current and method for manufacture of the same

Multiple threshold voltage circuitry based on silicon-on-insulator (SOI) technology is disclosed which utilizes N-wells and/or P-wells underneath the insulator in SOI FETs. The well under a FET is biased to influence the threshold voltage of the FET. A PFET and an NFET share a common buried P-well or N-well. Various types of logic can be fabricated in silicon-on-insulator (SOI) technology using multiple threshold voltage FETs. Embodiments provide circuits including the advantageous properties of both low-leakage transistors and high-speed transistors.

Multi-threshold circuitry based on silicon-on-insulator technology

An implementation method for a fast Null Convention Logic (NCL) data path includes a pipeline that is assembled from gates of various types of NCL. Self-ready flash NCL gates include a one-shot circuit to reset the gates to a null state and prepare the gates for the next wave of asserted data. In one embodiment, the one-shot circuit creates a flash pulse inside a gate in response to a change of a flash input line and ends the flash pulse in response to the gate output being reset to a null state. Conventional logic can be included in the data path as well.

Implementation method for fast NCL data path

Multi-threshold flash NCL circuitry

A self-ready flash null Convention Logic (NCL) gate includes a one-shot circuit to create the flash timing to reset the gate to a null state. The one-shot circuit may be any type of circuit to generate a pulse in response to a change of state of an input line. In one embodiment, the one-shot circuit may start the pulse in response to a change of a flash input line and end the pulse in response to the NCL output being reset to a null state.

Self-ready flash null convention logic

A method and apparatus for implementing vertical multi-threading in a microprocessor without implementing additional signal wires in the processor has been developed. The method uses a pre-existing signal to serve as a multi-function signal such that the multi-function signal can be used for clock enable, clock disable, and scan enable functions. The single multi-function signal exhibits multiple functionalities as needed by a flip-flop to operate in a plurality of modes. The method allows for the use of a pre-existing signal wire to be used as a process thread switch signal that would otherwise have to be explicitly hard-wired in the absence of the multi-functioning signal. The method further includes allowing multiple-bit flip-flops to be placed at sequential stages in a pipeline in order to facilitate vertical multi-threading and, in effect, increase processor performance. The apparatus provides means for distinguishing between specific characteristics exhibited by the multi-function signal. The apparatus further provides means for generating intermediary signals within a control block and then generating output signals to a data storage block. The apparatus also involves generating timing signals to a plurality of flip-flops dependent upon the behavior of the multi-function signal.

Thread switch circuit design and signal encoding for vertical threading

A digital delay-locked loop has been discovered having a reduced area as compared to typical register-controlled delay-locked loops (RDLLs) used to control strobe delay lines that provide delay to strobe signals driving asynchronous FIFOs. This result is achieved by reducing ratio computation (i.e. gear logic) circuitry of the RDLL. A master delay line receives a control code to delay a reference clock by one clock period. A slave delay line receives the control code to delay a strobe signal by a predetermined fraction of the clock period. The master delay line may include individual sections responsive to the control code which effectively delay a signal by a portion of the clock period, the delay having a fixed relationship to a delay associated with individual sections of the slave delay line.

Generating different delay ratios for a strobe delay

A digital delay locked loop uses a delay array to delay an input signal by an amount indicated by a delay code. A phase of the resulting delayed signal is compared to a corresponding phase of the input signal, and dependent on the comparison, the delay code is updated to indicate whether the delay array needs to provide more delay or less delay. The digital delay locked loop also uses a detection circuit that monitors for a predetermined condition of the delay code. In response to detection of the predetermined condition, the delay code is automatically reset to a value different than a value of the delay code present at a previous reset or initial startup of the digital delay locked loop.

Digital delay locked loop with extended phase capture range

A sense amplifier type input receiver includes a differential receiver circuit operatively coupled to an output stage. The output stage includes a pass gate enabled latch. The differential receiver circuit may output a first differential output and a second differential output. The output stage may include a first pass gate operatively coupled between the first differential output and an output of the output stage, a second pass gate operatively coupled between the second differential output and the pass gate enabled latch, and the pass gate enabled latch may be operatively coupled to the output of the output stage. A first clock signal and second clock signal may be coupled to the first pass gate to enable passing of the first differential output to the output of the output stage, the first and second clock signals may be coupled to the second pass gate to enable passing of the second differential output to the pass gate enabled latch, and the first and second clocks signal coupled to a pass gate of the pass gate enabled latch to enable operation of the pass gate enabled latch. A first inverter may be operatively coupled between the first differential output and the first pass gate, a second inverter operatively coupled between the second differential output and the second pass gate, and a third inverter operatively coupled to the output of the output stage.

Sense amplifier type input receiver with improved clk to Q

A register file design having an asymmetric bit line driver is provided. More specifically, the register file design uses a memory element that has a footer device that facilitates the discharge/charging of a bit line through a pass device, where a width of the footer device is greater than a width of the pass device. Further, a method for performing low power memory operations using asymmetric bit line drivers is provided.

Low power memory design with asymmetric bit line driver

A boundary scan cell design which places the multiplexor before the functional flip-flip on the functional line path, reducing the multiplexor delay in the critical path. This optimizes the multiplexor and functional flip-flop orientation, allowing for a significant reduction in the time required from output of the functional flip-flop to a pin or to the interior of the CPU (the clock to q delay). In order to ensure that boundary scan mode functions properly, the functional flip-flop may be designed to act as a buffer, i.e. become transparent, when the boundary scan cell is in boundary scan mode.

Method for operating a boundary scan cell design for high performance I/O cells

A method and apparatus for performing logic operations using a current mode logic circuit is provided. Further, a method and apparatus for performing high fan-in logic operations is provided. Further, a logic circuit that selectively steers current based upon a plurality of inputs is provided. Further, a method for performing logic operations using current steering is provided.

Growing community of inventors

Sunnyvale, CA, United States of America

Gajendra Prasad Singh