Adeia Semiconductor Bonding Technologies Inc.

Ziptronix, Inc.

Invensas Bonding Technologies, Inc.

Gaius Gillman Fountain, Jr

Paul M Enquist

Cyprian Emeka Uzoh

Laura Wills Mirkarimi

Guilian Gao

Qin-Yi Tong

Belgacem Haba

Rajesh Katkar

Chandrasekhar Mandalapu

Javier A DeLaCruz

Jeremy Alfred Theil

Ron Zhang

Bongsub Lee

Thomas Workman

Ilyas Mohammed

Shaowu Huang

Kyong-Mo Bang

Gabriel Z Guevara

Joy Watanabe

Liang Wang

Robert J Markunas

Suhail Jaan Sadiq

Pawel Mrozek

Carl T Petteway

George Carlton Hudson

Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.

DBI to Si bonding for simplified handle wafer

A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

Heterogeneous annealing method and device

Mitigating surface damage of probe pads in preparation for direct bonding of a substrate is provided. Methods and layer structures prepare a semiconductor substrate for direct bonding processes by restoring a flat direct-bonding surface after disruption of probe pad surfaces during test probing. An example method fills a sequence of metals and oxides over the disrupted probe pad surfaces and builds out a dielectric surface and interconnects for hybrid bonding. The interconnects may be connected to the probe pads, and/or to other electrical contacts of the substrate. A layer structure is described for increasing the yield and reliability of the resulting direct bonding process. Another example process builds the probe pads on a next-to-last metallization layer and then applies a direct bonding dielectric layer and damascene process without increasing the count of mask layers. Another example process and related layer structure recesses the probe pads to a lower metallization layer and allows recess cavities over the probe pads.

Mitigating surface damage of probe pads in preparation for direct bonding of a substrate

A device package comprising an integrated cooling assembly. The device package comprises a semiconductor device attached to a substrate and a cold plate attached to the semiconductor device. The cold plate's footprint is larger than the footprint of the semiconductor device so one or more portions of the cold plate extends past the edges of the semiconductor device's footprint. One or more standoffs are disposed adjacent to the semiconductor device to support the one or more portions of the cold plate that extend past the edges of the semiconductor device's footprint.

Cold plate and manifold integration for high reliability

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

Post CMP processing for hybrid bonding

Representative techniques provide process steps for forming a microelectronic assembly, including preparing microelectronic components such as dies, wafers, substrates, and the like, for bonding. One or more surfaces of the microelectronic components are formed and prepared as bonding surfaces. The microelectronic components are stacked and bonded without adhesive at the prepared bonding surfaces.

Techniques for processing devices

Representative implementations of techniques and methods include chemical mechanical polishing for hybrid bonding. The disclosed methods include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. Additionally, the conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

Direct hybrid bonding of substrates having microelectronic components with different profiles and/or pitches at the bonding interface

A microelectronic structure is disclosed. The microelectronic structure can include a bulk semiconductor portion that has a first surface and a second surface opposite the first surface. The microelectronic structure can include a via structure that extends at least partially through the bulk semiconductor portion along a direction non-parallel to the first surface. The microelectronic structure can include a first dielectric barrier layer that is disposed on the first surface of the bulk semiconductor portion and extends to the via structure. The microelectronic structure can include a second dielectric layer that is disposed on the first dielectric barrier layer and extends to the via structure.

Structures with through-substrate vias and methods for forming the same

A device package comprising an integrated cooling assembly comprising a semiconductor device and a cold plate directly bonded to the semiconductor device. The cold plate comprises a top portion, sidewalls extending downwardly from the top portion to a backside of the semiconductor device, an inlet opening, and an outlet opening. The top portion, the sidewalls, and the backside of the semiconductor device collectively define a coolant chamber volume therebetween. The inlet opening and the outlet opening are disposed in the top portion and are in fluid communication with the coolant chamber volume. The inlet opening is disposed above a hotspot region of the semiconductor device.

Embedded cooling systems for advanced device packaging and methods of manufacturing the same

A method of direct hybrid bonding first and second semiconductor elements of differential thickness is disclosed. The method can include patterning a plurality of first contact features on the first semiconductor element. The method can include second a plurality of second contact features on the second semiconductor element corresponding to the first contact features for direct hybrid bonding. The method can include applying a lithographic magnification correction factor to one of the first patterning and second patterning without applying the lithographic magnification correction factor to the other of the first patterning and the second patterning. In various embodiments, a differential expansion compensation structure can be disposed on at least one of the first and the second semiconductor elements. The differential expansion compensation structure can be configured to compensate for differential expansion between the first and second semiconductor elements to reduce misalignment between at least the second and fourth contact features.

Dimension compensation control for directly bonded structures

A cooling structure having a first side and a second side opposite the first side can be formed through a method comprising, forming an inlet and an outlet in a first substrate, forming at least one channel on the second side of the first substrate, wherein the at least one channel is in fluid communication with the inlet and outlet, forming a plurality of nozzles on the first side of a second substrate, and forming a plurality of channels on the second side of the second substrate opposite the first side of the second substrate. The plurality of channels is aligned with the plurality of nozzles, and the second side of the first substrate is bonded to the first side of the second substrate.

Electronic device cooling structures bonded to semiconductor elements

A device package comprising an integrated cooling assembly. The integrated cooling assembly comprises a semiconductor device and a cold plate attached to the semiconductor device. The cold plate comprises a first side, a second side vertically adjacent to the first side, a first inlet, a first cavity, and a first outlet. The first side of the cold plate comprises a first region, a second region, and a third region, wherein the second region is between the first region and the third region. In some embodiments, the semiconductor device is attached to the first region of the cold plate and the third region of the cold plate, and the first cavity extends along the second region of the cold plate.

Cold plate cavity designs for improved thermal performance

Embodiments herein provide for fluidic cooling assemblies embedded within a device package and related manufacturing methods. In one embodiment, the integrated cooling assembly includes a semiconductor device and a cold plate attached to the semiconductor device. The cold plate has a perimeter sidewall, a top portion and pairs of opposing cavity sidewalls. The perimeter sidewall extends downwardly from the top portion to a backside of the semiconductor device to define a perimeter of the cold plate. Each pair of opposing cavity sidewalls extends downwardly from the top portion towards the backside of the semiconductor device to define a coolant chamber volume therebetween. A distance between each pair of opposing cavity sidewalls in a direction parallel with the backside of the semiconductor device defines a width of a corresponding coolant chamber volume and a spacing between adjacent coolant chamber volumes, wherein the ratio of width to spacing is about 1:1.

Fluid channel geometry optimizations to improve cooling efficiency

DBI to SI bonding for simplified handle wafer

A method of manufacturing a device package. The method comprises patterning a first substrate to form patterned regions comprising a thermal oxide layer. The method further comprises directly bonding the patterned regions of the first substrate to a second substrate to form a bonding interface. The bonded first and second substrates form an integrated cooling assembly comprising a coolant chamber volume. Portions of the first substrate exposed to the coolant chamber volume comprise a native oxide layer.

Growing community of inventors

Youngsville, NC, United States of America

Gaius Gillman Fountain, Jr