Altera Corporation

Gaik Ming Chan

Bee Yee Ng

Herman Henry Schmit

Ilya K Ganusov

Ping-Chen Liu

Jeffrey Christopher Chromczak

Thien Le

Systems and methods described herein may relate to burst sampling of an integrated circuit device. Such a system may include a first logic access block including a data register and a second logic access block including a memory column. The memory column may be configurable to operate as a First In, First Out (FIFO), user lookup table (LUT) mode, or as user random access memory (RAM). The memory column may store data sampled from the data register for any number of clock cycles and the data may be sampled at the speed of a clock of a device under test (DUT).

At-speed burst sampling for user registers

An integrated circuit device includes a first memory cell that stores data representative of configuration data when operating in a first mode, wherein the first memory cell stores data representative of user-accessible data when operating in a second mode. The integrated circuit device also includes a second memory cell that stores a value indicating whether the first memory cell is operating in the first mode or is operating in the second mode. The integrated circuit device further includes a switch coupled to the first memory cell and controlled by the second memory cell, wherein the switch provides a defined value to be read in place of the stored data of the first memory cell when the second memory cell stores the value indicating that the first memory cell is operating in the second mode.

Lutram dummy read scheme during error detection and correction

Integrated circuits may include dual mode memory cells. Dual mode memory cells may be operated in a lookup-table mode or a memory mode. A dual mode memory cell may have configuration ports for supporting a configuration operation and user ports for supporting a user mode operation. When performing configuration operations in the memory mode, the configuration ports may be gated off to prevent existing user data from being accessed. Each column of memory cells may be arranged into groups. Each group of memory cells in a column may be connected to a respective local data line, which is connected to a global data line via a switch. The switch may be selectively activated to short the local data line to the global data line. Configured in this hierarchical data line architecture, leakage at the global data line can dramatically be reduced, and the memory cell read margin is improved.

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Butterworth, Malaysia

Gaik Ming Chan