Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Weebit Nano Ltd.

Gaël Castellan

Gabriel Molas

Jean-François Nodin

Amir Regev

Guiseppe Piccolboni

Julien Fils

Aurélien Lambert

A method for manufacturing an OxRAM type resistive memory cell including a silicon oxide layer, the method including determining manufacturing parameter values enabling the resistive memory cell to have an initial resistance between 10Ω and 3·10Ω; and forming on a substrate a stack successively including a first electrode, the silicon oxide layer and a second electrode, by applying the manufacturing parameter values.

Method for manufacturing an OxRAM type resistive memory cell

A method for determining a value of a manufacturing parameter of a resistive memory cell, the resistive memory cell including a stack of layers, includes providing reference memory cells corresponding to technological alternatives of the stack of layers; measuring for each reference memory cell an initial resistance value; determining for each reference memory cell a programming parameter value selected from among the resistance in a high resistance state and the programming window; establishing a relationship between the programming parameter and the initial resistance from the initial resistance values and the programming parameter values; and determining the manufacturing parameter value for which the programming parameter is greater than or equal to a target value, from the relationship between the programming parameter and the initial resistance and from a dependency relationship between the initial resistance and the manufacturing parameter.

Method for determining a manufacturing parameter of a resistive random access memory cell

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Grenoble, France

Gaël Castellan