Lucent Technologies Inc.

Università Degli Studi Di Bari

Università Degli Studi Di Bari Aldo Moro

Other

Consiglio Nazionale Delle Ricerche Istituto Processi Chimico Fisici-ipcf, Sede Di Bari

Gaetano Scamarcio

Federico Capasso

Alfred Yi Cho

Deborah Lee Sivco

Albert Lee Hutchinson

Luisa Torsi

Jerome Faist

Carlo Sirtori

Gerardo Palazzo

Nicola Cioffi

Mariano Troccoli

Serafina Cotrone

Luigia Sabbatini

Kyriaki Manoli

Maurizio Dabbicco

Rosaria Anna Picca

Eleonora Macchia

Antonia Mallardi

Simona Ottonelli

Maria Daniela Angione

Angela Intermite

Maria Magliulo

Branimir Radisavljevic

A field effect transistor sensor includes: a source-drain channel, a semiconductor layer on said source-drain channel, a first gate electrode arranged above said semiconductor layer, a first well enclosing said source-drain channel, said semiconductor layer and said first gate electrode, the first well being configured to be filled, in use, with a first liquid, particularly a gating electrolyte, a second gate electrode arranged above the first gate electrode and exposed to an interior of the first well. Also disclosed is an array device including an array of field effect transistor sensors according to the above.

Field effect transistor sensor and a corresponding array device

Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.

Field-effect transistor sensor

A transistor includes at least one conductive layer, at least one gate dielectric layer and at least one semiconducting film deposited on top of a receptor molecule layer previously deposited or covalently linked to the surface of the gate dielectric. The layer of biological material includes single or double layers of phospholipids, layers made of proteins such as receptors, antibodies, ionic channels and enzymes, single or double layers of phospholipids with inclusion or anchoring of proteins such as: receptors, antibodies, ionic channels and enzymes, layers made of oligonucleotide (DNA, RNA, PNA) probes, layers made of cells or viruses, layers made of synthetic receptors for example molecules or macromolecules similar to biological receptors for properties, reactivity or steric aspects.

Method to realize electronic field-effect transistor sensors

A system measures the strain of an object. The system includes a laser source for generating an output radiation, a strainable optical fiber having first and second facets, and means for calculating a measure of a strain of the optical fiber. The first facet is coupled to the laser source to receive the output radiation and transmit a guided radiation over the optical fiber towards the second facet. The second facet is adapted to receive the guided radiation and to reflect a corresponding reflected radiation towards the first facet. The laser source is a self-mixing type adapted to receive at least part of the reflected radiation and to mix the output radiation with the received radiation. The calculating means calculate the measure of the strain of the optical fiber based on a self-mixing effect in the laser source that is caused by the linear displacement of the second section.

System for optical fiber strain measure

An optical gain medium has first and second active layers and an injector layer interposed between the first and second active layers. The active layers have upper minibands and lower minibands. The injector layer has a miniband that transports charge carriers from the lower miniband of the first active layer to an excited state in the upper miniband of the second active layer in response to application of a voltage across the optical gain medium.

Quantum cascade laser with relaxation-stabilized injection

The core of the disclosed novel quantum cascade (QC) laser comprises a multiplicity of nominally identical repeat units, with a given repeat unit comprising a superlattice active region and a carrier injector region. Associated with the superlattice active region is an upper and a lower energy miniband, with the lasing transition being the transition from the lower edge of the upper miniband to the upper edge of the lower miniband. The injector facilitates carrier transport from the lower miniband to the upper miniband of the adjacent downstream repeat unit. QC lasers according to this invention can be designed to emit in the infrared, e.g., in the wavelength region 3-15 .mu.m, and can have high power.

Quantum cascade laser

The novel unipolar laser resembles a quantum cascade laser but utilizes radiative transitions between upper and lower minibands of superlattices, with injection of charge carriers from the lower miniband into the upper miniband of the adjacent downstream superlattice facilitated by a multilayer injector region. The lasing wavelength is typically in the mid-infrared, selectable by choice of the superlattice parameters. The novel laser is potentially well suited for high power operation, since it utilizes carrier transport in minibands, as opposed to tunneling between discrete energy states.

Article comprising a unipolar superlattice laser

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Bari, Italy

Gaetano Scamarcio