Inpria Corporation

Gaetano Giordano

Benjamin L Clark

Peter De Schepper

Craig M Gates

Dominick Smiddy

Jan Doise

Mark Geniza

Shu-Hao L Chang

In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

Organometallic radiation patternable coatings with low defectivity and corresponding methods

Growing community of inventors

Ixelles, Belgium

Gaetano Giordano