Horiba, Ltd.

Fondazione Bruno Kessler

Gabriele Giacomini

Daisuke Matsunaga

Claudio Piemonte

Antonino Picciotto

Nicola Zorzi

Giacomo Borghi

Francesco Ficorella

A radiation detection element comprises: a semiconductor part generating an electric charge by entrance of radiation; a signal output electrode provided at the semiconductor part and outputting a signal caused by the electric charge; a potential gradient generation electrode provided at the semiconductor part, for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode is generated inside the semiconductor part; a collection electrode provided at the semiconductor part, for collecting electric charges not derived from radiation; an insulating film provided on a side of the semiconductor part where the signal output electrode is located; and a conductive layer provided between the insulating film and a part of the semiconductor part, and having electric resistance lower than the electric resistance of the semiconductor part and higher than the electric resistance of the collection electrode. The conductive layer is located at a position where a distance from the signal output electrode is equal to or longer than a distance between the collection electrode and the signal output electrode.

Radiation detection element, radiation detector and radiation detection apparatus

A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

Semiconductor detector, radiation detector and radiation detector and radiation detection apparatus

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Trento, Italy

Gabriele Giacomini