Stmicroelectronics S.r.l.

Stmicroelectronics International N.v.

Gabriele Bellocchi

Mario Giuseppe Saggio

Simone Rascuna′

Edoardo Zanetti

Simone Rascuná

Simone Rascuna'

Cateno Marco Camalleri

Simone Rascuna

Anna Bassi

Paolo Badala'

Paolo Badalá

Paolo Badala′

Isodiana Crupi

Valeria Puglisi

Marco Santoro

Paolo BadalÀ

Process for manufacturing a 3C—SiC layer, comprising the steps of: providing a wafer of 4H—SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C—SiC layer, a Silicon layer on the 3C—SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C—SiC layer. If the Silicon layer is maintained on the 4H—SiC wafer, the process leads to the formation of a Silicon layer on the 4H—SiC wafer. The 3C—SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC material

A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

JBS device with improved electrical performances, and manufacturing process of the JBS device

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sic

A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device

A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500&#xb0; C. and 2600&#xb0; C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC

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Catania, Italy

Gabriele Bellocchi