International Business Machines Corporation

Infineon Technologies Ag

Gabriel Konrad Dehlinger

Alfred Grill

Jack Oon Chu

Steven John Koester

Jeremy Daniel Schaub

Qiqing Christine Ouyang

Yurii A Vlasov

Michael Treu

Fengnian Xia

Sharee Jane McNab

Qiging Ouyang

The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector

The invention relates to a lateral semiconductor diode, in which contact metal fillings (), which run in trenches () in particular in a silicon carbide body (), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction () is provided.

Lateral semiconductor diode and method for fabricating it

The present invention is a waveguide photodetector. In one embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined and a detection layer formed on the waveguide layer where guided light is detected. Each of the waveguide layer and the detection layer allows for the guiding of no more than a single mode of light for a given polarization. In another embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined, a detection layer formed on the waveguide layer where guided light is detected, a first electrical contact coupled to the detection layer, and a second electrical contact coupled to the detection layer. The first electrical contact and the second electrical contact are disposed in a spaced-apart, substantially parallel manner relative to each other.

Waveguide photodetector

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Annenheim, Austria

Gabriel Konrad Dehlinger