Industry-University Cooperation Foundation Hanyang University

Gabriel Jang

Jin Pyo Hong

Tae Yoon Kim

Gwang Ho Baek

Da Seul Hyeon

A selection device and a crosspoint memory including the same are provided. The selection device has a lower electrode. A polycrystalline metal oxide layer including insulating crystal grains and a conductive nanochannel formed in a grain boundary between the crystal grains is disposed on the lower electrode. An upper electrode is disposed on the polycrystalline metal oxide layer.

Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same

Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

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Seoul, South Korea

Gabriel Jang