Samsung Electronics Co., Ltd.

Gabjin Nam

Suhwan Kim

Donghwan Kim

Toshiro Nakanishi

Taehyun An

Sungkweon Baek

Jin Soak Kim

Yubin Kim

Eunae Chung

Jaehyoung Choi

Bongjin Kuh

Yongho Ha

Cheoljin Cho

Youngbin Lee

Musarrat Hasan

Geonju Park

A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric layer. The high dielectric layer and the ferroelectric layer have phases of different crystal structures.

Ferroelectric memory device

Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.

Methods of fabricating capacitor and semiconductor device including the capacitor

A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.

Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same

Static random access memory (SRAM) cells including vertical channel transistors

Growing community of inventors

Seoul, South Korea

Gabjin Nam