Skhynix Inc.

Ga-Ram Han

Keun-Woo Lee

Won-Jin Jung

A memory device may include: a memory cell array comprising a plurality of search regions, each of the search regions comprising a plurality of group regions, each of the group regions comprising a flag cell, each flag cell comprising information indicating whether the corresponding group region is programmed; a voltage generator suitable for generating a read bias voltage for the memory cell array according to a voltage control signal; and a memory controller suitable for selecting a search region and controlling the voltage generator to adjust the read bias voltage based on information of flag cell of the selected search region when a read command is received, and controlling a read operation for the selected search region based on the adjusted read bias voltage.

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Gyeonggi-do, South Korea

Ga-Ram Han