Skhynix Inc.

Ga Ram Choi

Changhan Kim

Dae Hyun Kim

There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a doped semiconductor layer including an upper surface facing a first direction, a multifunctional stack including a plurality of interlayer insulating layers and a plurality of conductive layers stacked alternately with each other in the first direction above the doped semiconductor layer, the multifunctional stack including a groove, a liner insulating layer on a bottom surface of the groove, a liner semiconductor layer on the liner insulating layer, and a first electrode and a second electrode spaced apart from each other in the groove and extending in the first direction from the liner semiconductor layer.

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Icheon-si, South Korea

Ga Ram Choi