Nanyang Technological University

Agency for Science, Technology and Research

G Subodh Mhaisalkar

Pooi See Lee

Yeng Ming Lam

Lixin Song

Ebinazar Benjamin Namdas

Zhikuan Chen

Wei Lin Leong

Tommy Cahyadi

An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

Organic memory device with a charge storage layer and method of manufacture

A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60&#xb0; C. to 225&#xb0; C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

Solution-processed inorganic films for organic thin film transistors

Growing community of inventors

Singapore, Singapore

G Subodh Mhaisalkar