Motorola Corporation

G Scot Srodes

John L Freeman, Jr

Andrew G Nagy

Willis R Goodner

A residue-free plasma etch of high temperature aluminum copper metallization is provided by the use of a single plasma etcher. The metallization layer is covered by a protective oxide layer. This structure is then placed in the single etcher and a vacuum is established. The protective oxide layer is then etched and without breaking the vacuum or removing the structure from the etcher the metal layer is also etched. This results in the etched surface being residue-free.

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Mesa, AZ, United States of America

G Scot Srodes