Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Fuyuma Ito

Yasuhito Yoshimizu

Hakuba Kitagawa

Yuya Akeboshi

Hisashi Okuchi

Naomi Yanai

Masayuki Kitamura

Susumu Obata

Mitsuo Sano

Keiichiro Matsuo

Tomohiko Sugita

Nobuhito Kuge

Yuji Yamada

Tatsuhiko Koide

Takaumi Morita

Hiroki Nakajima

Yohei Yamamoto

Yui Kagi

Hiroyuki Tanizaki

A semiconductor wafer includes a surface having at least one recess including an inner wall surface. The inner wall surface is exposed.

Semiconductor wafer and method of manufacturing semiconductor apparatus

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

Substrate treatment apparatus and manufacturing method of semiconductor device

A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.

Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate

According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.

Substrate treatment device, substrate treatment method, and semiconductor device manufacturing method

In one embodiment, a substrate treatment apparatus includes a supporter configured to support and rotate a substrate, and a liquid supplier configured to supply a liquid to the substrate. The apparatus further includes a wall provided separately from the supporter and at least partially surrounding the supporter, and a detector provided between the supporter and the wall and configured to detect a change in the liquid.

Substrate treatment apparatus and method of manufacturing semiconductor device

In one embodiment, a substrate treatment apparatus includes a substrate holder configured to hold a substrate provided with a film. The apparatus further includes a film treatment module configured to treat the film in accordance with warpage of the substrate such that the film includes a first region having a first film quality or a first film thickness and a second region having a second film quality or a second film thickness different from the first film quality or the first film thickness.

Substrate treatment apparatus, method of manufacturing semiconductor device and workpiece substrate

According to one embodiment, a substrate treating method includes: providing a first liquid onto a pattern on a substrate; providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern; providing, after the second liquid is provided onto the pattern, a third liquid; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas.

Substrate treating method and semiconductor device manufacturing method

According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.

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Yokkaichi, Japan

Fuyuma Ito