Renesas Electronics Corporation

Futoshi Komatsu

Shinichi Watanuki

Teruhiro Kuwajima

Tomoo Nakayama

Takashi Ogura

Shigeaki Shimizu

Hiroyuki Okuaki

In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NRis formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NRrespectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BMis formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NRis not formed within the semiconductor layer NR

Semiconductor device and manufacturing method thereof

An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film.

To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

Germanium-based photoreceiver having tungsten contacts

Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

Growing community of inventors

Ibaraki, Japan

Futoshi Komatsu